PCMO device with high switching stability

IEEE Electron Device Letters

Volumn 31, Issue 8, 2010, Pages 866-868

  Chen, Yiran ^a   Tian, Wei ^a   Li, Hai ^b   Wang, Xiaobin ^a   Zhu, Wenzhong ^a  

^a SEAGATE TECHNOLOGY   (United States)

^b POLYTECHNIC UNIVERSITY   (United States)

Author keywords

Nonvolatile memory; Pr0.7Ca0.3MnO3 (PCMO); Resistive memory

Indexed keywords

DEVICE RELIABILITY; DIFFERENT SIZES; ELECTRICAL TESTS; LAYER THICKNESS; NON-VOLATILE MEMORIES; RESISTANCE STATE; SIGNIFICANT IMPACTS; SUBMICROMETERS; SWITCHING DEVICES; SWITCHING PROPERTIES; SWITCHING STABILITY; SWITCHING VOLTAGES; THIN-FILM ELEMENTS;

CALCIUM; IMPACT RESISTANCE; MANGANESE OXIDE;

SWITCHING;

EID: 77955176822     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2050457     Document Type: Article

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