Memory effect of sol-gel derived V-doped SrZrO3 thin films

Thin Solid Films

Volumn 494, Issue 1-2, 2006, Pages 287-290

  Liu, Chih Yi ^a   Chuang, Chun Chieh ^a   Chen, Jian Shian ^a   Wang, Arthur ^b   Jang, Wen Yueh ^b   Young, Jien Chen ^b   Chiu, Kuang Yi ^b   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

Memory effect; Nonvolatile memory; RRAM; SrZrO3

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MIM DEVICES; NONDESTRUCTIVE EXAMINATION; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; SOL-GELS; STRONTIUM COMPOUNDS;

MEMORY EFFECT; METAL-INSULATOR-METAL (MIM) SANDWICH STRUCTURES; RRAM; SRZRO3;

THIN FILMS;

EID: 27844576152     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.153     Document Type: Conference Paper

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