Improvement of reproducible hysteresis and resistive switching in metal- La0.7 Ca0.3 Mn O3 -metal heterostructures by oxygen annealing

Applied Physics Letters

Volumn 90, Issue 18, 2007, Pages

  Dong, R ^a   Xiang, W F ^a   Lee, D S ^a   Oh, S J ^a   Seong, D J ^a   Heo, S H ^a   Choi, H J ^a   Kwon, M J ^a   Chang, M ^a   Jo, M ^a   Hasan, M ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; HYSTERESIS; MOS DEVICES; OXYGEN;

OXYGEN ANNEALING; RESISTIVE SWITCHING; ROOM TEMPERATURE;

HETEROJUNCTIONS;

EID: 34247892431     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2736268     Document Type: Article

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