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Journal of Physics D: Applied Physics

Volumn 43, Issue 29, 2010, Pages

High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices

(5) Lin, Meng Han a Wu, Ming Chi a Huang, Chun Yang a Lin, Chen Hsi b Tseng, Tseung Yuen a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b WINBOND ELECTRONICS CORPORATION (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE LAYERS; HIGH-SPEED; HIGH-SPEED SWITCHING; MEMORY DEVICE; NON-VOLATILE MEMORY APPLICATION; OPERATION VOLTAGE; OXYGEN CONTENT; OXYGEN FLOW; RESISTIVE SWITCHING; SRZRO;

RAPID SOLIDIFICATION; SWITCHING SYSTEMS;

OXYGEN;

EID: 77954500594 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/43/29/295404 Document Type: Article

Times cited : (61)

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