Resistive switching properties of SrZrO3-based memory films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2153-2156

  Lin, Chun Chieh ^a   Lin, Chao Cheng ^a   Tu, Bing Chung ^a   Yu, Jung Sheng ^a   Lin, Chen Hsi ^b   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

Conduction mechanism; Dopant; Forming process; Nonvolatile memory; Resistive random access memory (RRAM); Resistive switching; SrZrO3; Vanadium oxide

Indexed keywords

DOPING (ADDITIVES); NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; SPUTTER DEPOSITION; VANADIUM COMPOUNDS;

CONDUCTION MECHANISMS; FORMING PROCESSES; NONVOLATILE MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; VANADIUM OXIDES;

MAGNETIC FILMS;

EID: 34547869679     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2153     Document Type: Article

References (18)

1. S. Lai and T. Lowrey: IEDM, Tech. Dig., 2001, p. 803.
2. G. A. Prinz: Science 282 (1998) 1660.
3. T. Hayashi, Y. Igarashi, D. Inomata, T. Ichimori, T. Mitsuhashi, K. Ashikaga, T. Ito, M. Yoshimaru, M. Nagata, S. Mitarai, H. Godaiin, T. Nagahama, C. Isobe, H. Moriya, M. Shoji, Y. Ito, H. Kuroda, and M. Sasaki: IEDM Tech. Dig., 2002, p. 543.
4. A. Chen, S. Haddad, Y. C. Wu, T. N. Fang, Z. Lan, S. Avanzino, S. Pangrle, M. Buynoski, M. Rathor, W. Cai, N. Tripsas, C. Bill, M. VanBuskirk, and M. Taguchi: IEDM Tech. Dig., 2005, p. 746.
5. R. Sezi, A. Walter, R. Engl, A. Maltenberger, J. Schumann, M. Kund, and C. Dehm: IEDM Tech. Dig., 2003, p. 259.
6. H. Sim, H. Choi, D. Lee, M. Chang, D. Choi, Y. Son, E. H. Lee, W. Kim, Y. Park, I. K. Yoo, and H. Hwang: IEDM Tech. Dig., 2005, p. 758.
7. A. Beck, J. G. Bednorz, C. Gerber, C. Rossel, and D. Widmer: Appl. Phys. Lett. 77 (2000) 139.
8. C. Rossel, G. I. Meijer, D. Bremauid, and D. Widmer: J. Appl. Phys. 90 (2001) 2892.
9. C. Y. Liu, P. H. Wu, A. Wang, W. Y. Jang, J. C. Young, K. Y. Chiu, and T. Y. Tseng: IEEE Electron Device Lett. 26 (2005) 351.
10. J. W. Park, K. Jung, M. K. Yang, J. K. Lee, D. Y. Kim, and J. W. Park: J. Appl. Phys. 99 (2006) 124102.
11. Y. Watanabe, J. G. Bednorz, A. Bietsch, C. Gerber, D. Widmer, A. Beck, and S. J. Wind: Appl. Phys. Lett. 78 (2001) 3738.
12. T. Fujii, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, and Y. Tokura: Appl. Phys. Lett. 86 (2005) 012107.
13. A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura: Proc. SPIE 5932 (2005) 59322C.
14. C. Y. Liu, A. Wang, W. Y. Jang, and T. Y. Tseng: J. Phys. D 39 (2006) 1156.
15. C. Y. Liu, C. C. Chuang, J. S. Chen, A. Wang, W. Y. Jang, J. C. Young, K. Y. Chiu, and T. Y. Tseng: Thin Solid Films 494 (2006) 287.
16. C. C. Lin, B. C. Tu, C. C. Lin, C. H. Lin, and T. Y. Tseng: IEEE Electron Device Lett. 27 (2006) 725.
17. S. M. Sze: Physics of Semiconductor Device (Wiley, New York, 1981) 2nd ed., p. 402.
18. X. Qi, J. Dho, R. Tomov, M. G. Blamire, and J. L. MacManus-Deiscoll: Appl. Phys. Lett. 86 (2005) 062903.