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Applied Physics Letters

Volumn 104, Issue 19, 2014, Pages

Effect of La3+ substitution with Gd3+ on the resistive switching properties of La0.7Sr0.3MnO 3 thin films

(3) Lee, Hong Sub a Park, Chang Sun a Park, Hyung Ho a

a Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MANGANESE OXIDE; MANGANITES; PEROVSKITE; PHOTOELECTRONS; POSITIVE IONS; SURFACE SEGREGATION; SWITCHING; VACANCIES; X RAY PHOTOELECTRON SPECTROSCOPY;

CURRENT VOLTAGE MEASUREMENT; ELECTROCHEMICAL MIGRATION; FAVORABLE CONDITIONS; NEAR EDGE X-RAY ABSORPTION SPECTROSCOPIES; PARTIAL SUBSTITUTION; PEROVSKITE MANGANITES; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS;

SWITCHING SYSTEMS;

EID: 84900848221 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4876115 Document Type: Article

Times cited : (32)

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