Electrical properties and crystal structure of (Ba,Sr)TiO3 films prepared at low temperatures on a LaNiO3 electrode by radio-frequency magnetron sputtering

Applied Physics Letters

Volumn 70, Issue 2, 1997, Pages 249-251

  Chu, Chung Ming ^a   Lin, Pang ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRODES; INTERDIFFUSION (SOLIDS); LANTHANUM COMPOUNDS; MAGNETRON SPUTTERING; OXYGEN; PERMITTIVITY; SECONDARY ION MASS SPECTROMETRY; X RAY DIFFRACTION;

BARIUM STRONTIUM TITANATE; CAPACITANCE VOLTAGE CHARACTERISTICS; CRYSTALLINITY; LANTHANUM NICKEL OXIDE;

THIN FILMS;

EID: 0030871114     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118380     Document Type: Article

References (9)

1. T. Kuroiwa, Y. Tsunemine, T. Horikawa, T. Makita, J. Tanimura, N. Mikami, and K. Sato, Jpn. J. Appl. Phys. 33, 5187 (1994).
2. W. J. Lee, I. K. Park, G. E. Jang, and H. G. Kim, Jpn. J. Appl. Phys. 34, 196 (1995).
3. C. S. Hwang, S. O. Park, H. J. Cho, C. S. Kang, H. K. Kang, S. I. Lee, and M. Y. Lee, Appl. Phys. Lett. 67, 2819 (1995).
4. Y. Fukuda, K. Aoki, K. Numato, and A. Nishimura, Jpn. J. Appl. Phys. 33, 5255 (1994).
5. H. Ichinose, M. Nagano, H. Katsuki, and H. Takagi, J. Mater. Sci. 29, 5115 (1994).
6. M. S. Chen, J. M. Wu, and T. B. Wu, Jpn. J. Appl. Phys. 34, 4870 (1995).
7. D. A. Chang, P. Lin, and T. Y. Tseng, Appl. Phys. Lett. 64, 3252 (1994).
8. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
9. R. Mahendiran, S. K. Tiwary, A. K. Raychaudhuri, T. V. Ramakrishinan, R. Mahesh, N. Rangavittal, and C. N. R. Rao, Phys. Rev. B 53, 3348 (1996).