Method to distinguish ferroelectric from nonferroelectric origin in case of resistive switching in ferroelectric capacitors

Applied Physics Letters

Volumn 92, Issue 6, 2008, Pages

  Kohlstedt, H ^a   Petraru, A ^a   Szot, K ^a   Rudiger A ^a   Meuffels, P ^a   Haselier, H ^a   Waser, R ^a   Nagarajan, V ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BIAS VOLTAGE; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; STRONTIUM COMPOUNDS; SWITCHING SYSTEMS;

FERROELECTRIC SWITCHING PROCESS; PIEZOELECTRIC RESPONSE;

CAPACITORS;

EID: 39349109608     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2841917     Document Type: Article

References (35)

1. J. W. Park, D. Y. Kim, and J. K. Lee, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1953687 23, 1309 (2005).
2. H. Kohlstedt, K. H. Gundlach, and S. Kuriki, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.353066 73, 2564 (1993).
3. B. J. Choi, D. S. Jeong, S. K. C. Rohde, S. Choi, J. H. Oh, H. J. Kim, and C. S. Hwang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2001146 98, 033715 (2005).
4. Y. Watanabe, J. G. Bednorz, A. Bietsch, Ch. Gerber, D. Widmer, A. Beck, and S. J. Wind, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1377617 78, 3738 (2001).
5. M. N. Kozicki, M. Park, and M. Mitkova, IEEE Trans. Nanotechnol. ZZZZZZ 1536-125X 4, 331 (2005).
6. L. Ma, S. Pyo, J. Ouyang, Q. Xu, and Y. Yang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1556555 82, 1419 (2003).
7. M. A. Reed, J. Chen, A. M. Rawlett, D. W. Price, and J. M. Tour, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1377042 78, 3735 (2003).
8. A. L. Greer and N. Mathur, Nature (London) NATUAS 0028-0836 10.1038/4371246a 437, 1246 (2005).
9. S. R. Ovshinsky, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett. 21.1450 21, 1450 (1968).
10. C. Rossel, G. I. Meijer, D. Bŕmaud, and D. Widmer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1389522 90, 2892 (2001).
11. A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126902 77, 139 (2000).
12. R. Oligschlaeger, R. Waser, R. Meyer, S. Karthäuser, and R. Dittmann, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2162860 88, 042901 (2006).
13. A. Sawa, T. Fuji, M. Kawasaki, and T. Tokura, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1812580 85, 4073 (2004).
14. K. Szot, G. Bihlmeyer, W. Speier, and R. Waser, Nat. Mater. NMAACR 1476-1122 10.1038/nmat1614 5, 312 (2006).
15. G. Dearnaley, Phys. Lett. A PYLAAG 0375-9601 25, 760 (1967).
16. T. W. Hickmott and W. R. Hiatt, Solid-State Electron. SSELA5 0038-1101 10.1016/0038-1101(70)90100-0 13, 1033 (1970).
17. J. G. Simmons and R. Verderber, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1754908 10, 197 (1967).
18. G. Dearnaley, A. M. Stoneham, and D. V. Morgan, Rep. Prog. Phys. RPPHAG 0034-4885 10.1088/0034-4885/33/3/306 33, 1129 (1970).
19. R. Waser and M. Aono, Nat. Mater. NMAACR 1476-1122 10.1038/nmat2023 6, 833 (2007).
20. P. W. M. Blum, R. M. Wolf, J. F. M. Gilessen, and M. P. C. M. Krijin, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.73.2107 73, 2107 (1994).
21. Y. Watanabe, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.114170 66, 28 (1995).
22. A. Bune, S. Ducharme, V. Fridkin, L. Blinov, S. Palto, N. Petukhova, and S. Yudin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.114423 67, 3975 (1995).
23. K. Gotoh, H. Tamura, H. Takauchi, and A. Yoshida, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 35, 39 (1996).
24. M. Okano and Y. Watanabe, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125712 76, 233 (2000).
25. Y. Watanabe, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.59.11257 59, 11257 (1999).
26. J. Rodríguez Contreras, H. Kohlstedt, U. Poppe, R. Waser, and Ch. Buchal, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1590431 83, 126 (2003).
27. S. Y. Wu, H. X. Liu, L. Gu, R. K. Singh, L. Budd, M. van Schilfgaarde, M. R. McCartney, D. J. Smith, and N. Newman, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1570521 82, 3047 (2003).
28. R. Meyer and H. Kohlstedt, Integr. Ferroelectr. IFEREU 1058-4587 10.1080/10584580490893655 64, 77 (2004).
29. R. Meyer and H. Kohlstedt, IEEE Trans. Ultrason. Ferroelectr. Freq. Control ITUCER 0885-3010 53, 2340 (2006).
30. P. van der Sluis, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1581365 82, 4089 (2003); P. van der Sluis, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1690492 84, 2211 (2004).
31. J. Rodriguez Contreras, H. Kohlstedt, A. Petraru, A. Gerber, B. Hermanns, H. Haselier, H. V. Nagarajan, and C. Buchal, J. Cryst. Growth JCRGAE 0022-0248 277, 210 (2005).
32. A. Petraru, V. Nagarajan, H. Kohlstedt, R. Ramesh, D. G. Schlom, and R. Waser, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 10.1007/s00339-006- 3592-2 84, 67 (2006).
33. M. Dawber, D. J. Jung, and J. F. Scott, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1536022 82, 436 (2003).
34. R. Meyer and R. Waser, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2337078 100, 051611 (2006).
35. E. Y. Tsymbal and H. Kohlstedt, Science SCIEAS 0036-8075 10.1126/science.1126230 313, 181 (2006).