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Applied Physics Letters

Volumn 99, Issue 4, 2011, Pages

Low temperature solution-processed graphene oxide/Pr0.7Ca 0.3MnO3 based resistive-memory device

(6) Kim, Insung a Siddik, Manzar a Shin, Jungho a Biju, Kuyyadi P a Jung, Seungjae a Hwang, Hyunsang a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; LOW TEMPERATURES; MEMORY APPLICATIONS; ON/OFF RATIO; OXYGEN IONS; RESISTANCE RANDOM ACCESS MEMORY; RETENTION PROPERTIES; SOLUTION-PROCESSED; SPIN-COATING METHOD; SWITCHING PERFORMANCE; SWITCHING PHENOMENON;

GRAPHENE; MANGANESE OXIDE;

RANDOM ACCESS STORAGE;

EID: 79961066928 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3617426 Document Type: Article

Times cited : (47)

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