Wide operation margin of toggle mode switching for magnetic random access memory with preceding negative pulse writing scheme

Applied Physics Letters

Volumn 88, Issue 11, 2006, Pages

  Hung, Chien Chung ^a,c   Lee, Yuan Jen ^a   Kao, Ming Jer ^a   Wang, Yung Hung ^a   Huang, Rei Fu ^a   Chen, Wei Chuan ^a   Chen, Young Shying ^a   Shen, Kuei Hung ^a   Tsai, Ming Jinn ^a   Lin, Wen Chin ^b   Tang, Denny Duan Lee ^b   Chao, Shiuh ^c  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; MAGNETIC PROPERTIES; RANDOM ACCESS STORAGE; ROBUSTNESS (CONTROL SYSTEMS);

SWITCHING CURRENT; TOGGLE MAGNETIC RANDOM ACCESS MEMORY (MRAM); TOGGLE SWITCHING;

SWITCHING;

EID: 33645161774     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2181628     Document Type: Article

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