High device yield of resistive switching characteristics in oxygen-annealed SrZrO3 memory devices

IEEE Transactions on Electron Devices

Volumn 58, Issue 4, 2011, Pages 1182-1188

  Lin, Meng Han ^a   Wu, Ming Chi ^a   Huang, Yi Han ^a   Lin, Chen Hsi ^b   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

Oxygen vacancy; rapid thermal annealing (RTA); resistive random access memory (RRAM); SrZrO3 (SZO)

Indexed keywords

AMBIENTS; BOTTOM SURFACES; EFFECTIVE THICKNESS; MEMORY DEVICE; NONDESTRUCTIVE READOUT; RADIO-FREQUENCY-MAGNETRON SPUTTERING; RELIABLE RETENTION; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SRZRO; STRONG ELECTRIC FIELDS;

ELECTRIC FIELDS; EQUIPMENT; GRAIN BOUNDARIES; OXYGEN; OXYGEN VACANCIES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SWITCHING SYSTEMS; THIN FILMS;

RANDOM ACCESS STORAGE;

EID: 79953096152     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2104374     Document Type: Article

References (25)

1. C. H. Ho, E. K. Lai, M. D. Lee, C. L. Pan, Y. D. Yao, K. Y. Hsieh, R. Liu, and C. Y. Lu, "A highly reliable self-aligned graded oxideWOx resistance memory: Conduction mechanisms and reliability," in VLSI Symp. Tech. Dig., 2007, pp. 228-229.
2. W. C. Chien, Y. C. Chen, E. K. Lai, Y. D. Yao, P. Lin, S. F. Horng, J. Gong, T. H. Chou, H. M. Lin, M. N. Chang, Y. H. Shih, K. Y. Hsieh, R. Liu, and C. Y. Lu, "Unipolar switching behaviors of RTO WOx RRAM," IEEE Electron Device Lett., vol. 31, no. 2, pp. 126-128, May 2010.
3. W. C. Chien, Y. C. Chen, E. K. Lai, Y. Y. Lin, K. P. Chang, Y. D. Yao, P. Lin, J. Gong, S. C. Tsai, C. H. Lee, S. H. Hsieh, C. F. Chen, Y. H. Shih, K. Y. Hsieh, R. Liu, and C. Y. Lu, "High-speed multilevel resistive RAM using RTO WOx," in Proc. SSDM, 2009, pp. 1206-1207.
4. D. Lee, D. Seong, H. J. Choi, I. Jo, R. Dong, W. Xiang, S. Oh, M. Pyun, S. Seo, S. Heo, M. Jo, D. K. Hwang, H. K. Park, M. Chang, and M. Hasan, "Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications," in IEDM Tech. Dig., 2006, pp. 797-800.
5. B. Gao, H. W. Zhang, S. Yu, B. Sun, L. F. Liu, X. Y. Liu, Y. Wang, R. Q. Han, J. F. Kang, B. Yu, and Y. Y. Wang, "Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology," in VLSI Symp. Tech. Dig., 2009, pp. 30-31.
6. 2film memory devices," IEEE Electron Device Lett., vol. 28, no. 5, pp. 366-368, May 2007. (Pubitemid 46667430)
7. 2memory films based on the interface layer formed by using Ti top electrode," J. Appl. Phys., vol. 102, no. 9, p. 094 101, Nov. 2007.
8. +implanted, " Appl. Phys. Lett., vol. 92, no. 1, p. 012 117, Jan. 2008.
9. W. Guan, S. Long, R. Jia, and M. Liu, "Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide," Appl. Phys. Lett., vol. 91, no. 6, p. 062 111, Aug. 2007.
10. 2," Appl. Phys. Lett., vol. 88, no. 23, p. 232 106, Jun. 2006.
11. J. W. Seo, J. W. Park, K. S. Lin, J. H. Yang, and S. J. Kang, "Transparent resistive random access memory and its characteristics for nonvolatile resistive switching," Appl. Phys. Lett., vol. 93, no. 22, p. 223 505, Dec. 2008.
12. W. Y. Chang, Y. C. Lai, T. B. Wu, S. F. Wang, F. Chen, and M. J. Tsai, "Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory application," Appl. Phys. Lett., vol. 92, no. 2, p. 022 110, Jan. 2008.
13. 3," Nat. Mater., vol. 5, no. 4, pp. 312-320, Apr. 2006.
14. 3thin films," Thin Solid Films, vol. 516, no. 2-4, pp. 402-406, Mar. 2006.
15. 3memory films," IEEE Electron Device Lett., vol. 27, no. 9, pp. 725-727, Sep. 2006.
16. 3thin films," IEEE Trans. Electron Devices, vol. 54, no. 12, pp. 3146-3151, Dec. 2007.
17. 3thin films with embedded Cr layer," IEEE Electron Device Lett., vol. 29, no. 10, pp. 1108-1111, Sep. 2008.
18. 3-electrodized Si substrate," Appl. Phys. Lett., vol. 94, no. 17, p. 172 107, May 2009.
19. K. L. Wang, T. Y. Tseng, H. L. Tsai, and S. C. Wu, "Resistive switching polymer materials based on poly(aryl ether)s containing triphenylamine and 1,2,4-triazole moieties," J. Polym. Sci. A, Polym. Chem., vol. 40, no. 20, pp. 6861-6871, Sep. 2008.
20. 2," IEEE Trans. Electron Devices, vol. 54, no. 10, pp. 2762-2768, Oct. 2007. (Pubitemid 47541876)
21. 3films on Si (100) by pulsed laser deposition using aMgO buffer," Appl. Phys. A, Mater. Sci. Process., vol. 75, no. 4, pp. 545-549, Jun. 2002. (Pubitemid 34777431)
22. G. S. Park, X. S. Li, D. C. Kim, R. J. Jung, M. J. Lee, and S. Seo, "Observation of electric-field induced Ni filament channels in polycrystalline NiOx film," Appl. Phys. Lett., vol. 91, no. 22, p. 222 103, Nov. 2007.
23. S. M. Sze, Physics of Semiconductor Devices., 2nd ed. New York:Wiley, 1981.
24. S. S. Zumdahl, Chemical Principle., 3rd ed. New York: Houghton Mifflin, 1998.
25. 6thin films," Phys. Rev. B, Condens. Matter, vol. 77, no. 17, p. 174423, May 2008.