Nonpolar bistable resistive switching behaviors of bismuth titanate oxide thin film

Ferroelectrics

Volumn 380, Issue 1 PART 1, 2009, Pages 30-37

  Lin, Meng Han ^a   Wu, Ming Chi ^a   Lin, Chun Chieh ^b   Tseng, Tseung Yuen ^a,c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL DONG HWA UNIVERSITY   (Taiwan)

^c NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

Bismuth titanate oxide (BTO); RRAM; Sol gel method

Indexed keywords

BISMUTH TITANATE OXIDES; BISTABLES; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MEMORY DEVICE; MEMORY STATE; NON-POLAR; NON-VOLATILE MEMORY APPLICATION; RESISTANCE RATIO; RESISTIVE SWITCHING BEHAVIORS; RETENTION BEHAVIOR; ROOM TEMPERATURE; SOL-GEL METHODS; THERMAL TREATMENT; VOLTAGE STRESS;

BISMUTH; GELS; SOL-GELS; SOLS; SWITCHING SYSTEMS; THIN FILM DEVICES; THIN FILMS;

SOL-GEL PROCESS;

EID: 77749316175     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190902870101     Document Type: Conference Paper

References (13)

1. A. Chen, S. Haddad, Y.-C. Wu, T.-N. Fang, Z. Lan, S. Avanzino, S. Pangrle, M. Buynoski, M. Rathor, W. Cai, N. Tripsas, C. Bill, M. VanBuskirk, and M. Taguchi, Tech. Dig.-Int. Electron Devices Meet. 746 (2005).
2. C.-C. Lin, C.-Y. Lin, M.-H. Lin, C.-H. Lin, and T.-Y. Tseng, IEEE Trans. Electron Devices. 54, 3146 (2007).
3. C.-Y. Liu, A. Wang, W.-Y. Jang, and T.-Y. Tseng, J. Phys. D, Appl. Phys. 39, 1156 (2006).
4. J.-W. Park, J.-W. Park, M.-K. Yang, K. Jung, D.-Y. Kim, and J.-K. Lee, J. Vac. Sci. Technol. A, Vac. Surf. Films. 24, 970 (2006).
5. C.-C. Lin, B.-C. Tu, C.-C. Lin, C.-H. Lin, and T.-Y. Tseng, IEEE Electron Device Lett. 27, 725 (2006).
6. A. Beck, J. G. Bednorz, C. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 77, 139 (2000).
7. H. Sim, D. Choi, D. Lee, S. Seo, M.-J. Lee, I.-K. Yoo, and H. Hwang, IEEE Electron Device Lett. 26, 292 (2005).
8. M. Fujimoto, H. Koyama, Y. Hosoi, K. Ishihara, and S. Kobayashi, Jpn. J. Appl. Phys. 45, 310 (2006).
9. M. Fujimoto, H. Koyama, M. Konagai, Y. Hosoi, K. Ishihara, S. Ohnishi, and N. Awaya, Appl. Phys. Lett. 89, 223509 (2006).
10. S. Seo, M.-J. Lee, D.-H. Seo, E.-J. Jeoung, D.-S. Suh, Y.-S. Joung, I.-K. Yoo, I.-R. Hwang, S.-H. Kim, I.-S. Byun, J.-S. Kim, J.-S. Choi, and B.-H. Park, Appl. Phys. Lett. 85, 5655 (2004).
11. D. Lee, H. Choi, H. Sim, D. Choi, H. Hwang, M.-J. Lee, S.-A. Seo, and I.-K. Yoo, IEEE Electron Device Lett. 26, 719 (2005).
12. Y. Jin, H. Sakai, and M. Shimada, Jpn. J. Appl. Phys. 45, 3243 (2006).
13. C.-Y. Lin, C.-Y. Wu, C.-Y. Wu, T.-C. Lee, F.-L. Yang, C. Hu, and T.-Y. Tseng, IEEE Electron Device Letters. 28, 366 (2007).