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Journal of Physics D: Applied Physics

Volumn 42, Issue 4, 2009, Pages

Resistive switching properties and low resistance state relaxation in Al/Pr0.7Ca0.3MnO3/Pt junctions

(5) Li, Song Lin a Liao, Z L a Li, J a Gang, J L a Zheng, D N a

a INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-RESISTANCE STATE; HIGH-TO-LOW; INSULATOR LAYER; JUNCTION RESISTANCES; LOW-RESISTANCE STATE; NEGATIVE DIFFERENTIAL RESISTANCES; NEGATIVE PULSE; PLATINIZED SILICON SUBSTRATES; PULSE DURATIONS; PULSE SWITCHING; RESISTANCE VALUES; RESISTIVE SWITCHING; STABLE PROCESS;

ALUMINUM; CALCIUM; MANGANESE COMPOUNDS; OXYGEN; PLATINUM; STABILITY CRITERIA;

PULSE GENERATORS;

EID: 67650044806 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/42/4/045411 Document Type: Article

Times cited : (35)

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