Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films

Thin Solid Films

Volumn 516, Issue 2-4, 2007, Pages 402-406

  Lin, Chun Chieh ^a   Yu, Jung Sheng ^a   Lin, Chih Yang ^a   Lin, Chen Hsi ^b   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

Doping concentration; Nonvolatile memory; Resistive random access memory (RRAM); Resistive switching; SrZrO3

Indexed keywords

DATA STORAGE EQUIPMENT; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; SPUTTER DEPOSITION; STRONTIUM COMPOUNDS;

BOTTOM ELECTRODES; DOPING CONCENTRATION; NONVOLATILE MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); SWITCHING BEHAVIORS;

THIN FILMS;

EID: 36048989000     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.040     Document Type: Article

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