Resistive switching characteristics and set-voltage dependence of low-resistance state in sputter-deposited SrZrO3: Cr memory films

Journal of Applied Physics

Volumn 99, Issue 12, 2006, Pages

  Park, Jae Wan ^a,b   Jung, Kyooho ^a   Yang, Min Kyu ^a   Lee, Jeon Kook ^a   Kim, Dal Young ^c   Park, Jong Wan ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Hanyang University   (South Korea)

^c Seoul National University of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; POLYCRYSTALLINE MATERIALS; SPUTTER DEPOSITION; STRONTIUM COMPOUNDS; SWITCHING; THIN FILMS;

BISTABLE RESISTIVE SWITCHING; MEMORY FILMS; POLYCRYSTALLINE STRUCTURE; SET-VOLTAGE;

MAGNETIC FILMS;

EID: 33745725585     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2202121     Document Type: Article

References (19)

1. C. J. Haung, C. Y. Chang, and T. Y. Tseng, J. Appl. Phys. 72, 5786 (1992).
2. C. Y. Liu, H. T. Lue, and T. Y Tseng, Appl. Phys. Lett. 81, 4416 (2002).
3. F. Argall, Solid-State Electron. 11, 535 (1968).
4. T. W. Hickmott, J. Vac. Sci. Technol. 6, 828 (1969).
5. J.-W. Park, J.-W. Park, D.-Y. Kim, and J.-K. Lee, J. Vac. Sci. Technol. A 23, 1309 (2005).
6. M. K. Yang, D.-Y. Kim, J.-W. Park, and J.-K. Lee, J. Korean Phys. Soc. 47, S313 (2005).
7. A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. 85, 4073 (2004).
8. A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 77, 139 (2000).
9. C. Rossel, G. I. Meijer, D. Bremaud, and D. Widmer, J. Appl. Phys. 90, 2892 (2001).
10. J. R. Contreras, H. Kohlstedt, U. Poppe, R. Waser, C. Buchai, and N. A. Pertsev, Appl. Phys. Lett. 83, 4595 (2003).
11. M. J. Rozenberg, I. H. Inoue, and M. J. Sánchez, Phys. Rev. Lett. 92, 178302 (2004).
12. S. Tsui et al., Appl. Phys. Lett. 85, 317 (2004).
13. N. Newman, K. Char, S. M. Garrison, R. W. Barton, R. C. Taber, C. B. Eom, T. H. Geballe, and B. Wilkens, Appl. Phys. Lett. 57, 520 (1990).
14. J. R. Gavaler, J. Talvacchio, T. T. Braggins, M. G. Forrester, and J. Greggi, J. Appl. Phys. 70, 4383 (1991).
15. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
16. M. Ieda, G. Sawa, and S. Kalo, J. Appl. Phys. 42, 3737 (1971).
17. M. Ohring, The Material Science of Thin Films, 1st ed. (Academic, New York, 1992).
18. C. Rohde, B. J. Choi, D. S. Jeong, S. Choi, J.-S. Zhao, and C. S. Hwang, Appl. Phys. Lett. 86, 262907 (2005).
19. Y. Watanabe, J. G. Bednorz, A. Bietsch, Ch. Gerber, D. Widmer, A. Beck, and S. J. Wind, Appl. Phys. Lett. 78, 3738 (2001).