High density and high reliability chain FeRAM with damage-robust MOCVD-PZT capacitor with SrRuO3/IrO2 top electrode for 64Mb and beyond

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 126-127

  Hidaka, O ^a   Ozaki, T ^a   Kanaya, H ^a   Kumura, Y ^a   Shimojo, Y ^a   Shuto, S ^a   Yamada, Y ^a   Yahashi, K ^a   Yamakawa, K ^a   Yamazaki, S ^a   Takashima, D ^a   Miyakawa, T ^a   Shiratake, S ^a   Ohtsuki, S ^a   Kunishima, I ^a   Nitayama, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTROCHEMICAL ELECTRODES; LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; STRONTIUM COMPOUNDS;

HIGH DENSITY CHAIN FERAM; PLANAR CAPACITORS;

RANDOM ACCESS STORAGE;

EID: 41149097155     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. T.Ozaki et al., Symp On VLSI Tech.(2001), p. 113
2. T.Ozaki et. al., SSDM(2003), p.646
3. D.Takashima et al., JSSCC(1998), p.787
4. Y.Kumura et al., ESSDERC(2005), p.557
5. H.Kanaya et al., Symp On VLSI Tech.(2004), p. 150