Impact of electrode materials on resistive-switching memory programming

IEEE Electron Device Letters

Volumn 30, Issue 8, 2009, Pages 817-819

  Russo, Ugo ^a,b   Cagli, Carlo ^a   Spiga, Sabna ^b   Cianci, Elena ^b   Ielmini, Danielle ^a  

^a POLITECNICO DI MILANO   (Italy)

^b LABORATORIO MDM   (Italy)

Author keywords

Dielectric breakdown; Electrothermal modeling; Nonvolatile memories; Resistive switching memory (RRAM); Transition metal oxide

Indexed keywords

DIELECTRIC BREAKDOWN; ELECTROTHERMAL MODELING; NONVOLATILE MEMORIES; RESISTIVE-SWITCHING MEMORY (RRAM); TRANSITION METAL OXIDE;

COMPUTER SIMULATION LANGUAGES; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRODES; PRECIOUS METALS; SWITCHING;

TRANSITION METAL COMPOUNDS;

EID: 68249159974     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2025061     Document Type: Article

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