Spectroscopic study on resistive switching property of perovskite manganite film with controlled oxygen deficient state

Journal of Physics D: Applied Physics

Volumn 44, Issue 42, 2011, Pages

  Choi, Sun Gyu ^a   Lee, Hong Sub ^a   Choi, Hyejung ^b   Chung, Sung Woong ^b   Park, Hyung Ho ^a  

^a Yonsei University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL STATE; CRYSTALLINITIES; FERMI EDGE; GROWTH ORIENTATIONS; NEAR EDGE X-RAY ABSORPTION FINE STRUCTURES; OXYGEN DEFICIENCY; OXYGEN DEFICIENT; OXYGEN FLOW RATES; PEROVSKITE MANGANITES; RADIO FREQUENCY MAGNETRON SPUTTERING; RESISTIVE SWITCHING; SPECTROSCOPIC STUDIES; SUBSTRATE TEMPERATURE; VALENCE-BAND MAXIMUMS;

ABSORPTION SPECTROSCOPY; FILM GROWTH; FLOW RATE; LANTHANUM; MANGANESE OXIDE; OXYGEN; PEROVSKITE; PHOTOELECTRON SPECTROSCOPY; SPECTROSCOPIC ANALYSIS; SUBSTRATES; SWITCHING SYSTEMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

OXYGEN VACANCIES;

EID: 80055097472     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/42/422001     Document Type: Article

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