Filament-type resistive switching in homogeneous Bi-layer Pr0.7 Ca0.3 Mn O3 thin film memory devices

Electrochemical and Solid-State Letters

Volumn 14, Issue 1, 2011, Pages

  Liu, Xinjun ^a   Biju, Kuyyadi P ^a   Bourim, El Mostafa ^a   Park, Sangsu ^a   Lee, Wootae ^a   Lee, Daeseok ^a   Seo, Kyungah ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CONDUCTIVE FILAMENTS; CURRENT VOLTAGE CURVE; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MEMORY DEVICE; OPERATION MODE; OXYGEN CONTENT; OXYGEN IONS; RESISTIVE SWITCHING; RETENTION TIME; SWITCHING PROCESS; SYMMETRIC TOP;

HYSTERESIS; HYSTERESIS LOOPS; MANGANESE; OXYGEN; PLATINUM; SWITCHING SYSTEMS; THIN FILMS;

SWITCHING;

EID: 78751480230     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3505098     Document Type: Article

References (20)

1. R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater., 21, 2632 (2009). 10.1002/adma.200900375
2. J. J. Yang, M. D. Pickett, X. M. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nat. Nanotechnol., 3, 429 (2008). 10.1038/nnano.2008.160
3. A. Sawa, Mater. Today, 11, 28 (2008). 10.1016/S1369-7021(08)70119-6 (Pubitemid 351680723)
4. A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett., 85, 4073 (2004). 10.1063/1.1812580
5. K. Tsubouchi, I. Ohkubo, H. Kumigashira, M. Oshima, Y. Matsumoto, K. Itaka, T. Ohnishi, M. Lippmaa, and H. Koinuma, Adv. Mater., 19, 1711 (2007). 10.1002/adma.200601957 (Pubitemid 47153955)
6. K. Shono, H. Kawano, T. Yokota, and M. Gomi, Appl. Phys. Express, 1, 055002 (2008). 10.1143/APEX.1.055002
7. H. Kawano, K. Shono, T. Yokota, and M. Gomi, Appl. Phys. Express, 1, 101901 (2008). 10.1143/APEX.1.101901
8. R. Yang, X. M. Li, W. D. Yu, X. J. Liu, X. Cao, Q. Wang, and L. D. Chen, Electrochem. Solid-State Lett., 12, H281 (2009). 10.1149/1.3129136
9. S. L. Li, D. S. Shang, J. Li, J. L. Gang, and D. N. Zheng, J. Appl. Phys., 105, 033710 (2009). 10.1063/1.3073987
10. M. Hasan, R. Dong, H. J. Choi, J. Yoon, J. Park, D. J. Seong, and H. Hwang, J. Electrochem. Soc., 156, H239 (2009). 10.1149/1.3072792
11. T. Harada, I. Ohkubo, K. Tsubouchi, H. Kumigashira, T. Ohnishi, M. Lippmaa, Y. Matsumoto, H. Koinuma, and M. Oshima, Appl. Phys. Lett., 92, 222113 (2008). 10.1063/1.2938049
12. Z. L. Liao, Z. Z. Wang, Y. Meng, Z. Y. Liu, P. Gao, J. L. Gang, H. W. Zhao, X. J. Liang, X. D. Bai, and D. M. Chen, Appl. Phys. Lett., 94, 253503 (2009). 10.1063/1.3159471
13. D. Seong, J. Park, N. Lee, M. Hasan, S. Jung, H. Choi, J. Lee, M. Jo, W. Lee, S. Park, Tech. Dig.-Int. Electron Devices Meet., 2009, 1.
14. K. Szot, W. Speier, G. Bihlmayer, and R. Waser, Nature Mater., 5, 312 (2006). 10.1038/nmat1614
15. M. Janousch, G. I. Meijer, U. Staub, B. Delley, S. F. Karg, and B. P. Andreasson, Adv. Mater., 19, 2232 (2007). 10.1002/adma.200602915 (Pubitemid 47409283)
16. K. M. Kim, B. J. Choi, and C. S. Hwang, Appl. Phys. Lett., 90, 242906 (2007). 10.1063/1.2748312 (Pubitemid 46934800)
17. S. H. Chang, J. S. Lee, S. C. Chae, S. B. Lee, C. Liu, B. Kahng, D. W. Kim, and T. W. Noh, Phys. Rev. Lett., 102, 026801 (2009). 10.1103/PhysRevLett. 102.026801
18. W. Y. Chang, Y. C. Lai, T. B. Wu, S. F. Wang, F. Chen, and M. J. Tsai, Appl. Phys. Lett., 92, 022110 (2008). 10.1063/1.2834852
19. T. Menke, P. Meuffels, R. Dittmann, K. Szot, and R. Waser, J. Appl. Phys., 105, 066104 (2009). 10.1063/1.3100209
20. D. W. Reagor, S. Y. Lee, Y. Li, and Q. X. Jia, J. Appl. Phys., 95, 7971 (2004). 10.1063/1.1737802