Recent progress in ab initio simulations of hafnia-based gate stacks

Journal of Materials Science

Volumn 47, Issue 21, 2012, Pages 7399-7416

  Zhu, H ^a   Tang, C ^b   Fonseca, L R C ^c   Ramprasad, R ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b UNIVERSITY OF SYDNEY   (Australia)

^c UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO SIMULATIONS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; FIRST-PRINCIPLES STUDY; FUNDAMENTAL RESEARCH; HIGH DIELECTRIC CONSTANTS; POLYSILICON ELECTRODES; RESEARCH COMMUNITIES; TECHNOLOGICAL EVOLUTION;

CALCULATIONS; DENSITY FUNCTIONAL THEORY; GERMANIUM; INTERFACES (MATERIALS);

HAFNIUM OXIDES;

EID: 84865236716     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-012-6568-y     Document Type: Article

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