Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO2 and HfO2

IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 445-447

  Lu, Ching Huang ^a   Wong, Gloria M T ^a   Deal, Michael D ^a   Tsai, Wilman ^b   Majhi, Prashant ^c   Chui, Chi On ^b   Visokay, Mark R ^d   Chambers, James J ^d   Colombo, Luigi ^d   Clemens, Bruce M ^a   Nishi, Yoshio ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

^c SEMATECH   (United States)

^d TEXAS INSTRUMENTS   (United States)

Author keywords

HfO2; High dielectrics; Metal gate; SiO2; Work function

Indexed keywords

ANNEALING; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRODES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SILICA;

GATE ELECTRODES; METAL GATE; WORK FUNCTION;

MOSFET DEVICES;

EID: 22944450625     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.851232     Document Type: Article

References (15)

1. R. Lin, Q. Lu, P. Ranade, T.-J. King, and C. Hu, "An adjustable work function technology using Mo gate for CMOS devices," IEEE Electron Device Lett., vol. 23, no. 1. pp. 49-51, Jan. 2002.
2. C. Cabral Jr, J. Kedzierski, B. Linder, S. Zafar, V. Narayanan, S. Fang, A. Steegen, P. Kozlowski, R. Carruthers, and R. Jammy, "Dual workfunction fully silicided metal gates," in Symp. VLSI Tech. Dig., Jun. 2004, pp. 15-17.
3. H. Zhong, S. Hong, Y.-S. Suh, H. Lazar, G. Heuss, and V. Misra, "Properties of Ru-Ta alloys as gate electrodes for nMOS and pMOS silicon devices," in IEDM Tech. Dig., 2001, pp. 467-470.
4. AUTHOR Pls provide page rangeS. C. H. Hung, J. Hoyt, J. Gibbons, C. H. Lu. M Deal, and Y. Nishi, "Multilayer metallic gate electrode for depletion suppression and tunable workfunction," in Proc. 2003 Semiconductor Interface Specialists Conf.,
5. C.-H. Lu, G. Wong, M. Deal, S. Hung, S. Park, P. Majhi, W. Tsai, P. McIntyre, B. Clemens, and Y. Nishi, "Bilayer metal structure for tunable work function gate electrodes," in Proc. Mater: Res. Soc. Symp., 2005.
6. W. Gao, J. F. Conley, and Y. Ono, "Stacked metal layers as gates for MOSFET threshold voltage control," in Proc. Mater Rec. Soc. Symp., vol. 765, 2003. pp. D1.4.1-6.
7. I. S. Jeon, J. Lee. P. Zhao, P. Sivasubramani, T. Oh, H. J. Kim, D. Cha, J., Huang, M. J. Kim, B. E. Gnade. J. Kim, and R. M. Wallace, "A novel methodology on tuning work function of metal gate using stacking bi-metal layers," in IEDM Tech. Dig., 2004, pp. 303-306.
8. J. R. Hauser and K. Ahmed. "Characterization of ultrathin oxides using electrical C-V and I-V measurements," in Proc. AIP Conf., 1998, pp. 205-239.
9. R. Jha, J. Garganos, Y. H. Kim, R. Choi, J. Lee. and V. Misra, "A capacitance-based methodology for work function extraction of metals on high-Κ," IEEE Electron Device Lett., vol. 25, no. 6, pp. 420-423, Jun. 2004.
10. Y. C. Yeo. P. Ranade, Q. Lu. R. Lin, T.-J. King, and C. Hu, "Effects of high-Κ dielectrics on the workfunctions of metal and silicon gates," in Symp. VLSI Tech. Dig., 2001, pp. 49-50.
11. H. Kim, P. C. MeIntyre, C. O. Chui, K. C. Saraswat, and S. Stemmer, "Engineering chemically abrupt high-κ, metal oxide/silicon interfaces using an oxygen-gettering metal overlayer," J. Appl. Phys., vol. 96, no. 6, pp. 3467-3472, 2004.
12. S. Park, L. Colombo, K. Cho, and Y. Nishi, "Ab initio study of metal gate electrode work function," Appl. Phys. Lett., to be published.
13. U. Welzel, P. Lamparter, and E. J. Mittemeijer, "X-ray diffraction and reflectometry investigation of interdiffusion in sputtered niobium-tungsten bilayers," in Proc. Mater. Res. Soc. Symp., vol. 562, 1999. pp. 147-153.
14. A. M. Brown and M. F. Ashby, "Correlations for diffusion constants," Acta Metall., vol. 28, no. 8. pp. 1085-101, 1980.
15. M. DiBattista and J. W. Schwank, "Determination of diffusion in polyerystalline platinum thin films," J. Appl. Phys., vol. 86, no. 9, pp. 4902-4907. 1999.