Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

Materials Science and Engineering R: Reports

Volumn 51, Issue 4-6, 2006, Pages 37-85

  Houssa, M ^a,b   Pantisano, L ^a   Ragnarsson, L Å ^a   Degraeve, R ^a   Schram, T ^a   Pourtois, G ^a   De Gendt, S ^a,c   Groeseneken, G ^a,b   Heyns, M M ^a,b  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Defects; Electrical performances; High gate dielectrics; MOS devices; Reliability

Indexed keywords

DEFECTS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); MOS DEVICES; RELIABILITY; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

ELECTRICAL PERFORMANCES; GATE DIELECTRICS; HFO2; HIGH-Κ GATE DIELECTRICS;

DIELECTRIC MATERIALS;

EID: 33646891317     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mser.2006.04.001     Document Type: Review

References (108)

1. International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 2003.
2. Zeitzoff P.M., Hutchby J.A., and Huff H.R. Int. J. High-Speed Electron. Syst. 12 (2002) 267
3. Stathis J.H., and Di Maria D.J. IEDM Tech. Dig. (1998), IEEE, NJ p. 167
4. Degraeve R., Pangon N., Kaczer B., Nigam T., Groeseneken G., and Naem A. VLSI Symp. (1999), IEEE, NJ p. 59
5. Schroder D.K., and Babcock J.A. J. Appl. Phys. 94 (2003) 1
6. Wilk G.D., Wallace R.M., and Anthony J.M. J. Appl. Phys. 89 (2001) 5243
7. In: Houssa M. (Ed). High-κ Gate Dielectrics (2003), IOP, London
8. In: Huff H.R., and Gilmer D.C. (Eds). High Dielectric Constant Materials (2005), Springer
9. Preisler E.J., Guha S., Copel M., Bojarczuk N.A., Reuter M.C., and Gusev E. Appl. Phys. Lett. 85 (2004) 6230
10. Tseng H.H., Capasso C.C., Schaeffer J.K., Hebert E.A., Tobin P.J., Gilmer D.C., Triyoso D., Ramon M.E., Kalpat S., Luckowski E., Taylor W.J., Jeon Y., Adetutu O., Hedge R.I., Noble R., Jahanbani M., El Chemali C., and White B.E. IEDM Tech. Dig. (2004), IEEE, NJ p. 821
11. Callegari A., Jamison P., Cartier E., Zafar S., Gusev E., Narayanan V., D'Emic C., Lacey D., Feely F.Mc., Jammy R., Gribelyuk M., Shepard J., Andreoni W., Curioni A., and Pignedoli C. IEDM Tech. Dig. (2004), IEEE, NJ p. 825
12. Lebedinskii Yu.Yu., Zenkevich A., Gusev E.P., and Gribelyuk M. Appl. Phys. Lett. 86 (2005) 191904
13. Visokay M.R., Chambers J.J., Rotondaro A.L.P., Shanware A., and Colombo L. Appl. Phys. Lett. 80 (2002) 3183
14. Morais J., et al. Appl. Phys. Lett. 81 (2002) 2995
15. Koyama M., Kamimuta Y., Ino T., Kaneko A., Inumiya S., Eguchi K., Takayanagi M., and Nishiyama A. IEDM Tech. Dig. (2004), IEEE, NJ p. 499
16. Watanabe T., Takayanagi M., Kojima K., Sekine K., Yamasaki H., Eguchi K., Ishimaru K., and Ishiuchi H. IEDM Tech. Dig. (2004), IEEE, NJ p. 507
17. Quevedo-Lopez M.A., Chambers J.J., Visokay M.R., Shanware A., and Colombo L. Appl. Phys. Lett. 87 (2005) 012902
18. Robertson J., and Peacock P.W. In: Houssa M. (Ed). High-κ Gate Dielectrics (2003), IOP, London 372
19. 2 and High-κ Materials for ULSI Gate Dielectrics. MRS, Warrendale (1999) 409
20. Shannon R.D. J. Appl. Phys. 73 (1993) 348
21. Hobbs C., Dip L., Reid K., Gilmer D., Hedge R., Ma T., Taylor B., Cheng B., Samavedan S., Tseng H., Weddington D., Huang F., Farber D., Schippers M., Rendon M., Prabhu L., Rai R., Bagchi S., Conner J., Backer S., Dumbuya F., Locke J., Workman D., and Tobin P. Proceedings International Symposium on VLSI Technology Systems and Applications. IEEE, NJ (2001) 204
22. Perkins C.M., Triplett B.B., McIntyre P.C., Saraswat K.C., and Shero E. Appl. Phys. Lett. 81 (2002) 1417
23. Bastos K.P., Morais J., Miotti L., Pezzi R.P., Soares G.V., Baumvol I.J.R., Hegde R.I., Tseng H.H., and Tobin P.J. Appl. Phys. Lett. 81 (2002) 1669
24. Hendrix B.C., et al. Appl. Phys. Lett. 80 (2002) 2362
25. Puurunen R.L. J. Appl. Phys. 95 (2004) 4777
26. Lee B.H., Kang L., Qi W.-J., Nieh R., Jeon Y., Onishi K., and Lee J.C. IEDM Tech. Dig. (1999), IEEE, NJ p. 133
27. Yamamoto K., Hayashi S., Kubota M., and Niwa M. Appl. Phys. Lett. 81 (2002) 2053
28. Yamamoto K., Hayashi S., Niwa M., Asai M., Horii S., and Miya H. Appl. Phys. Lett. 83 (2003) 2229
29. Hobbs C., Fonseca L., Dhandapani V., Samavedam S., Taylor B., Grant J., Dip L., Triyoso D., Hegde R., Gilmer D., Garcia R., Roan D., Lovejoy L., Rai R., Hebert L., Tseng H., White B., and Tobin P. VLSI Symposium. IEEE, NJ (2003) 9
30. Cartier E., Narayanan V., Gusev E.P., Jamison P., Linder B., Steen M., Chan K.K., Frank M., Bojarczuk N., Copel M., Cohen S.A., Zafar S., Callegari A., Gribelyuk M., Chudzik M.P., Cabral Jr. C., Carruthers R., D'Emic C., Newbury J., Lacey D., Guha S., and Jammy R. VLSI Symposium. IEEE, NJ (2004) 44
31. Kaneko A., et al. Proceedings International Conference Solid State Dev. Materials. Tokyo (2003) 56
32. Lüth H. Solid Surfaces, Interfaces and Thin Films. fourth ed. (2001), Springer
33. Tung R.T. Mater. Sci. Eng. R. 35 (2001) 1
34. Ceperdley D.M., and Alder J.B. Phys. Rev. Lett. 45 (1980) 566
35. Soler J.M., Artacho E., Gale J.D., García A., Junquera J., Ordejón P., and Sánchez-Portal D. J. Phys. Condens. Matter 14 (2002) 2745
36. Xiong K., Peacock P.W., and Roberston J. Appl. Phys. Lett. 86 (2005) 12904
37. Pantisano L., Chen P.J., Afanas'ev V.V., Ragnarsson L.A., Pourtois G., and Groeseneken G. VLSI Symposium. IEEE, NJ (2004) 122
38. Adamchuk V.K., and Afanas'ev V.V. Prog. Surf. Sci. 41 (1992) 111
39. Powell R.J. J. Appl. Phys. 41 (1970) 2424
40. Shanware A., Massoud H.Z., Vogel E., Henson K., Hauser J.R., and Wortman J.J. Microel. Eng. 48 (1999) 295
41. DiMaria D.J., and Stathis J.H. J. Appl. Phys. 89 (2001) 5015
42. Ragnarsson L.-A., Bojarczuk N.A., Copel M., Gusev E.P., Karasinski J., and Guha S. J. Appl. Phys. 93 (2003) 3912
43. Fischetti M.V., Neumayer D.A., and Cartier E. In: Houssa M. (Ed). High-κ Gate Dielectrics (2003), IOP, London 397
44. Takagi S.I., Toriumi A., Iwase M., and Tango H. IEEE Trans. Electron. Devices 41 (1994) 2357
45. Takagi S.I., and Takayanagi M. Jpn. J. Appl. Phys. 41 (2002) 2348
46. Saito S., Shimamoto Y., Torii K., Manabe Y., Caymax M., Maes J.W., Hiratani M., and Kimura S. Proceedings International Conference Solid State Dev. Materials. Tokyo (2002)
47. Fischetti M.V., Neumayer D.A., and Cartier E.A. J. Appl. Phys. 90 (2001) 4587
48. Saito S., Hisamoto D., Kimura S., and Hiratani M. IEDM Tech. Dig. (2003), IEEE, NJ p. 797
49. Koomen J. Solid-State Electron. 16 (1973) 801
50. Takagi S.I., and Takayanagi M. Jpn. J. Appl. Phys. 41 (2002) 2348
51. Irie H., Kita K., Kyuno K., and Toriumi A. IEDM Tech. Dig. (2003), IEEE, NJ p. 167
52. Romanjek K., Andrieu F., Ernst T., and Ghibaudo G. IEEE Electron. Device Lett. 25 (2004) 583
53. Kerber A., Cartier E., Pantisano L., Rosmeulen M., Degraeve R., Kauerauf T., Groeseneken G., Maes H.E., and Schwalke U. International Reliab. Phys. Symposium. IEEE, NJ (2003) 41
54. Kerber A., Cartier E., Ragnarsson L.-A., Rosmeulen M., Pantisano L., Degraeve R., Kim Y., and Groeseneken G. VLSI Symposium. IEEE, NJ (2003) 159
55. Ragnarsson L.-A., Bojarczuk N.A., Karasinski J., and Guha S. IEEE Electron. Device Lett. 24 (2003) 689
56. L.-Å. Ragnarsson, N.A. Bojarczuk, S. Guha, E. Gusev, J.M. Karasinski, Presented at the Semiconductor Interface Specialists Conference, IEEE, NJ, 2001.
57. Zhu W., Han J.-P., and Ma T.P. IEEE Trans. Electron. Devices 51 (2004) 98
58. Leroux C., Mitard J., Ghibaudo G., Garros X., Reimbold G., Guillaumot B., and Martin F. IEDM Tech. Dig. (2004), IEEE, NJ p. 737
59. Weber O., Andrieu F., Casse M., Ernst T., Mitard J., Ducroquet F., Damlencourt J.-F., Hartmann J.M., Lafond D., Papon A.-M., Militaru L., Thevenod L., Romanjek K., Leroux C., Martin F., Guillaumot B., Ghibaudo G., and Deleonibus S. IEDM Tech. Dig. (2004), IEEE, NJ p. 867
60. Van den Bosch G., Groeseneken G., and Maes H.E. IEEE Electron. Device Lett. 14 (1993) 107
61. Lindberg O. Proceedings of the I.R.E. (1952) 1414
62. Joelsson K.B., Fu Y., Ni W.-X., and Hansson G.V. J. Appl. Phys. 81 (1997) 1264
63. Onsia B., De Gendt S., Delabie A., Van Elshocht S., Caymax M., Conard T., Heyns M., Lin S., Green M., and Tsai W. Worshop on Advanced Surface Preparation Leading into the Nano Era (2003)
64. Ragnarsson L.-A., Tsai W., Kerber A., Chen P.J., Cartier E., Pantisano L., De Gendt S., and Heyns M. Proceedings International Conference on Solid State Dev. Materials. Tokyo (2003) 46
65. Ragnarsson L.-A., Pantisano L., Kaushik V., Saito S.-I., Shimamoto Y., De Gendt S., and Heyns M. IEDM Tech. Dig. (2003), IEEE, NJ p. 87
66. Rotondaro A.L.P., Visokay M.R., Chambers J.J., Shanware A., Khamamkar R., Bu H., Laaksonen R.T., Tseng L., Douglas M., Kuan R., Bevan M.J., Grider T., McPherson J., and Colombo L. VLSI Symposium. IEEE, NJ (2002) 148
67. Koyama M., Kaneko A., Ino T., Koike M., Kamata Y., Iijima R., Kamimuta Y., Takashima A., Suzuki M., Hongo C., Inumiya S., Takayanagi M., and Nishiyama A. IEDM Tech. Dig. (2002), IEEE, NJ p. 849
68. Sekine K., Inumiya S., Sato M., Kaneko A., Eguchi K., and Tsunashima Y. IEDM Tech. Dig. (2003), IEEE, NJ p. 102
69. Gusev E.P., et al. IEDM Tech. Dig. (2004), IEEE, NJ p. 79
70. Tsai W., Ragnarsson L.-A., Pantisano L., Chen P.J., Onsia B., Schram T., Cartier E., Kerber A., Young E., Caymax M., De Gendt S., and Heyns M. IEDM Tech. Dig. (2003), IEEE, NJ p. 311
71. Datta S., Gewey G., Doczy M., Doyle B.S., Jin B., Kavalieros J., RKotlyar R., Metz M., Zelick N., and Chau R. IEDM Tech. Dig. (2003), IEEE, NJ p. 653
72. Kerber A., Cartier E., Pantisano L., Degraeve R., Kauerauf T., Kim Y., Hou A., Groeseneken G., Maes H.E., and Schwalke U. IEEE Electron. Device Lett. 24 (2003) 87
73. Kerber A., Cartier E., Pantisano L., Degraeve R., Groeseneken G., Maes H.E., and Schwalke U. Micro. Eng. 72 (2004) 267
74. E. Cartier, et al., Presented at the International Conference on Insulating Films on Semiconductors, Barcelona, 2003.
75. Pantisano L., Cartier E., Kerber A., Degraeve R., Lorenzini M., Rosmeulen M., Groeseneken G., and Maes H.E. VLSI Symposium. IEEE, NJ (2003) 163
76. Groeseneken G., Maes H.E., Beltran N., and De Keersmaecker R.F. IEEE Trans. Electron. Devices 31 (1984) 42
77. Degraeve R., Kerber A., Roussel P.J., Cartier E., Kauerauf T., Pantisano L., and Groeseneken G. IEDM Tech. Dig. (2003), IEEE, NJ p. 935
78. Houssa M., Afanas'ev V.V., Stesmans A., and Heyns M.M. Appl. Phys. Lett. 79 (2001) 3134
79. Houssa M., Autran J.L., Afanas'ev V.V., Stesmans A., and Heyns M.M. J. Electrochem. Soc. 149 (2002) F181
80. Kerber A., Cartier E., Degraeve R., Roussel P.J., Pantisano L., Kauerauf T., Groeseneken G., Maes H.E., and Schwalke U. IEEE Trans. Electron. Devices 50 (2003) 1261
81. Alam M.A., Bude J., and Ghetti A. Proceedings International Reliab. Phys. Symposium. IEEE, NJ (2000) 21
82. Houssa M., Autran J.L., Stesmans A., and Heyns M.M. Appl. Phys. Lett. 81 (2002) 709
83. Degraeve R., Crupi F., Kwak D.H., and Groeseneken G. VLSI Symposium. IEEE, NJ (2004) 140
84. Crupi F., Degraeve R., Kerber A., Kwak D.H., and Groeseneken G. International Reliab. Phys. Symposium. IEEE, NJ (2004) 181
85. De Blauwe J., Houdt J.V., Wellekens D., Greseneken G., and Maes H.E. IEEE Trans. Electron. Devices 45 (1998) 1745
86. Cellere G., Larcher L., Valentini M.G., and Paccagnella A. IEEE Trans. Electron. Devices 49 (2002) 1367
87. Kauerauf T., Degraeve R., Cartier E., Soens C., and Groeseneken G. IEEE Electron. Device Lett. 23 (2002) 215
88. Degraeve R., Groeseneken G., Bellens R., Ogier J.L., Depas M., Roussel P.J., and Maes H.E. IEEE Trans. Electron. Devices 45 (1998) 904
89. Kauerauf T., Degraeve R., Cartier E., Govoreanu B., Blomme P., Kaczer B., Pantisano L., Kerber A., and Groeseneken G. IEDM Tech. Dig. (2002), IEEE, NJ p. 521
90. Shanware A., Visokay M.R., Chambers J.J., Rotondaro A.L.P., McPherson J., and Colombo L. IEDM Tech. Dig. (2003), IEEE, NJ p. 939
91. Jeppson K.O., and Svensson C.M. J. Appl. Phys. 48 (1977) 2004
92. Helms C.R., and Poindexter E.H. Rep. Prog. Phys. 57 (1994) 791
93. Alam M.A. IEDM Tech. Dig. (2003), IEEE, NJ p. 345
94. Chakravarthi S., Krishnan A.T., Reddy V., Machala C.F., and Krishnan S. Proceedings International Reliab. Phys. Symposium. IEEE, NJ (2004) 273
95. Krishnan A.T., Reddy V., Chakravarthi S., Rodriguez J., John S., and Krishnan S. IEDM Tech. Dig. (2003), IEEE, NJ p. 349
96. Onishi K., Choi R., Kang C.S., Cho H.J., Kim Y.H., Nieh R.E., Han J.H., Krishnan S.A., Akbar M.S., and Lee J.C. IEEE Trans. Electron. Devices 50 (2003) 1517
97. Zhou X.J., Tsetseris L., Rashkeev S.N., Fleetwood D.M., Schrimpf R.D., Pantelides S.T., Felix J.A., Gusev E.P., and D'Emic C. Appl. Phys. Lett. 84 (2004) 4394
98. Zafar S., Lee B.H., Stathis J.H., Callegari A., and Ning T. VLSI Symposium. IEEE, NJ (2004) 208
99. Houssa M., De Gendt S., Autran J.L., Groeseneken G., and Heyns M.M. Appl. Phys. Lett. 85 (2004) 2101
100. Houssa M., De Gendt S., Autran J.L., Groeseneken G., and Heyns M.M. VLSI Symposium. IEEE, NJ (2004) 212
101. Ogawa S., and Shiono N. Phys. Rev. B 51 (1995) 4218
102. Houssa M., Aoulaiche M., De Gendt S., Groeseneken G., Heyns M.M., and Stesmans A. Appl. Phys. Lett. 86 (2005) 093506
103. Afanas'ev V.V., and Stesmans A. J. Electrochem. Soc. 146 (1999) 3409
104. Warren W.L., Vanheusden K., Fleetwood D.M., Schwank J.R., Shaneyfelt M.R., and Winokur P.S. IEEE Trans. Nucl. Sci. 43 (1996) 2617
105. Devine R.A.B. Appl. Phys. Lett. 77 (2000) 1849
106. Stesmans A. Phys. Rev. Lett. 70 (1993) 1723
107. Inumiya S., et al. VLSI Symposium. IEEE, NJ (2003) 17
108. Colinge J.P. Solid State Electron. 48 (2004) 897