Bonding and gap states at GaAs-oxide interfaces

Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 373-376

  Robertson, John ^a   Lin, Liang ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

bonding; GaAs; interface

Indexed keywords

BULK SEMICONDUCTORS; FERMI LEVEL PINNING; GAAS; GAP STATE; HIGH DIELECTRIC CONSTANTS; HIGH MOBILITY; INTERFACE; OXIDE INTERFACES;

GALLIUM ARSENIDE; HAFNIUM COMPOUNDS; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 79751525418     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.09.013     Document Type: Conference Paper

References (34)

1. H. Hasegawa, L. He, H. Ohno, T. Sawada, T. Haga, Y. Abe, and H. Takahashi J. Vac. Sci. Technol., B 5 1097 1987
2. P.D. Ye J. Vac. Sci. Technol., A 26 697 2008
3. W. Monch Phys. Rev. Lett. 58 1260 1987
4. W.E. Spicer, I. Lindau, P. Skeath, C.Y. Su, and P. Chye Phys. Rev. Lett. 44 420 1980
5. W.E. Spicer, Z. Liliental-Weber, E. Weber, N. Newman, T. Kendelewicz, R. Cao, C. McCants, and I. Lindua J. Vac. Sci. Technol., B 6 1245 1988
6. C.J. Sandroff, M.S. Hegde, L.A. Farrow, C.C. Chang, and J.P. Harbison Appl. Phys. Lett. 54 362 1989
7. M. Hong, J. Kwo, A.R. Kortan, J.P. Mannaerts, and A.M. Sergent Science 283 1897 1997
8. M. Passlack, M. Hong, J.P. Mannaerts, R.L. Opila, S.N.G. Chu, F. Ren, N. Moriya, and J.R. Kwo IEEE Trans. ED 44 214 1997
9. M. Hong, J.R. Kwo, P. Tsai, Y. Chang, M.L. Huang, C. Chen, and T. Lin Jpn. J. Appl. Phys. 46 3167 2007
10. K. Hudait, S. Datta, G. Dewey, and R. Chau Tech. Digest IEDM 2007 23.5
11. M. Radosavljevic Tech. Digest IEDM 2009 13.1
12. R.J.W. Hill IEEE Electron Device Lett. 28 1080 2007
13. Y. Xuan IEEE Electron Device Lett. 29 294 2008
14. M.L. Huang, Y.C. Chang, C.H. Chang, Y.J. Lee, P. Chang, J. Kwo, T. B Wu, and M. Hong Appl. Phys. Lett. 87 252104 2005
15. R.M. Wallace, P.C. Mcintyre, J. Kim, and Y. Nishi MRS Bull 34 493 2009
16. M.J. Hale, S.I. Yi, J.Z. Sexton, A.C. Kummel, and M. Passlack J. Chem Phys. 119 6719 2003
17. C.L. Hinkle, M. Milojevic, B. Brennan, A.M. Sonnet, F.S. Aguirre-Tostdao, G.J. Hughes, E.M. Vogel, and R.M. Wallace Appl. Phys. Lett. 94 162101 2009
18. C.L. Hinkle, A.M. Sonnet, E.M. Voge, S. Mc. Donnell, G.J. Hughes, M. Milojevic, B. Lee, F.S. Aguirre-Tostado, K.J. Choi, J. Kim, and R.M. Wallace Appl. Phys. Lett. 91 163512 2007
19. E.A. Chagrov, and A.C. Kummel Surf. Sci. 603 3191 2009
20. M. Scarozza, G. Poutois, M. Houssa, M. Caymax, A. Stesmans, M. Meuris, and M.M. Heyns Microelectron. Eng. 86 1747 2009
21. J. Robertson J. Vac. Sci. Technol., B 18 1785 2000
22. J. Robertson, and B. Falabretti J. Appl. Phys. 100 014111 2006
23. J. Robertson, and L. Lin Tech. Digest IEDM 2009 6.1
24. M. Passlack, R. Droopad, Z. Yu, N. Medendorp, D. Braddock, X.W. Wang, T.P. Ma, and T. Buyuklimanli IEEE Electron Device Lett. 29 1181 2009
25. J. Robertson Appl. Phys. Lett. 94 152104 2009
26. W. Walcywyck Phys. Rev. B 37 4760 1998
27. P.W. Peacock, and J. Robertson Phys. Rev. Lett. 92 057601 2004
28. C.J. Forst, C. Ashman, K. Schwarz, and P.E. Blochl Nature 427 56 2004
29. M.D. Pashley Phys. Rev. B 40 10481 1999
30. D.J. Chadi J. Vac. Sci. Technol., A 5 834 1987
31. J.E. Northrup, and S. Froyen Phys. Rev. B 1994
32. V.P. LaBella Phys. Rev. Lett. 83 2989 1999
33. W.A. Harrison, E.A. Kraut, J.R. Waldrop, and R.W. Grant Phys. Rev. B 18 4402 1978
34. W. Wang, G. Lee, M. Huang, R.M. Wallace, and K.J. Cho J. Appl. Phys. 107 103720 2010