SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1436-1439

Identification of defect levels at InxGa1-xAs/oxide interfaces through hybrid functionals

(2) Komsa, Hannu Pekka a Pasquarello, Alfredo a

a EPFL (Switzerland)

Author keywords

Arsenic antisite; Dangling bond; Defects; DFT; GaAs; Hybrid functional; InGaAs; Vacancy

Indexed keywords

ATOMISTIC MODELS; BAND EDGE; DEFECT LEVELS; DEFECT STATE; DFT; FORMATION ENERGIES; GAAS; HYBRID DENSITY FUNCTIONAL CALCULATIONS; HYBRID FUNCTIONAL; HYBRID FUNCTIONALS; III-V COMPOUNDS; INAS; INGAAS; NATIVE DEFECT; SURFACE CONCENTRATION; VALENCE-BAND MAXIMUMS;

ARSENIC; DANGLING BONDS; DEFECTS; ELECTRON MOBILITY; ENERGY GAP; GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ARSENIDE; POINT DEFECTS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

DEFECT DENSITY;

EID: 79958021861 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.03.081 Document Type: Conference Paper

Times cited : (33)

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