Epitaxial anatase HfO2 on high-mobility substrate for ultra-scaled CMOS devices

Materials Science in Semiconductor Processing

Volumn 11, Issue 5, 2008, Pages 241-244

  Debernardi, A ^a   Wiemer, C ^a   Fanciulli, M ^a,b  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

Density functional theory; Epitaxy; HfO2; X ray

Indexed keywords

AB INITIO SIMULATIONS; ANATASE PHASE; ANATASE STRUCTURES; BULK COUNTERPART; EPITAXY; GAAS SUBSTRATES; HELMHOLTZ FREE ENERGY; HFO2; HIGH MOBILITY; IN-PLANE AXIS; MICROSCOPIC MECHANISMS; MONOCLINIC HFO; MONOCLINIC STRUCTURES; PREFERENTIAL ORIENTATION; SCALED CMOS; X-RAY SCATTERING MEASUREMENTS;

CRYSTAL GROWTH; FREE ENERGY; GALLIUM ALLOYS; GERMANIUM; HAFNIUM COMPOUNDS; SUBSTRATES; TITANIUM DIOXIDE; TITANIUM OXIDES;

DENSITY FUNCTIONAL THEORY;

EID: 70349779835     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2008.07.011     Document Type: Article

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