Gate oxides beyond SiO2

MRS Bulletin

Volumn 33, Issue 11, 2008, Pages 1017-1025

  Schlom, Darrell G ^a   Guha, Supratik ^a   Datta, Suman ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC POWER UTILIZATION; ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; HIGH-K DIELECTRIC; QUANTUM THEORY; SALES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSISTORS;

COMPUTER PERFORMANCE; DIELECTRIC CONSTANTS (K); EXPONENTIAL GROWTH; HAFNIUM BASED DIELECTRICS; QUANTUM-MECHANICAL TUNNELING; SEMICONDUCTOR INDUSTRY; SEMICONDUCTOR INDUSTRY ASSOCIATIONS; STATIC POWER CONSUMPTION;

SILICON OXIDES;

EID: 56849087931     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2008.221     Document Type: Article

References (140)

1. J.E. Lilienfeld, U.S. Patent 1,900,018 (March 7, 1933).
2. J. Bardeen, Phys. Rev. 71, 717 (1947).
3. D. Kahng, U.S. Patent 3,102,230 (August 27, 1963).
4. The National Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 1997), pp. 59-60, 70-72.
5. G.E. Moore, Electronics 38, 114 (1965).
6. G.E. Moore, in IEDM Technical Digest 1975 (IEEE, Piscataway, NJ, 1975), pp. 11-13.
7. G.E. Moore, in ISSCC Digest of Technical Papers 2003 (IEEE, Piscataway, NJ, 2003), pp. 20-23.
8. A.I. Kingon, J.-P. Maria, S.K. Streiffer, Nature 406, 1032 (2000).
9. G.D. Wilk, R.M. Wallace, J.M. Anthony, J. Appl. Phys. 89, 5243 (2001).
10. D.A. Müller, T. Sorsch, S. Moccio, F.H. Baumann, K. Evans-Lutterodt, G. Timp, Nature 399, 758 (1999).
11. S. Zaima, T. Furuta, Y. Yasuda, M. Iida, J. Electrochem. Soc. 137, 1297 (1990).
12. G.B. Alers, D.J. Werder, Y. Chabal, H.C. Lu, E.P. Gusev, E. Garfunkel, T. Gustafsson, R.S. Urdahl, Appl. Phys. Lett. 73, 1517 (1998).
13. A.Y. Mao, K.A. Son, J.M. White, D.L. Kwong, D.A. Roberts, R.N. Vrtis, J. Vac. Sci. Technol. A 17, 954 (1999).
14. D.C. Gilmer, D.G. Colombo, C.J. Taylor, J. Roberts, G. Haugstad, S.A. Campbell, H.-S. Kim, G.D. Wilk, M.A. Gribelyuk, W.L. Gladfelter, Chem. Vap. Deposition 4, 9 (1998).
15. W.B. Pennebaker, IBM J. Res. Dev. 13, 686 (1969).
16. J.K.G. Panitz, C.C. Hu, J. Vac. Sci. Technol. 16, 315 (1979).
17. V.S. Dharmadhikari, W.W. Grannemann, J. Vac. Sci. Technol. A 1, 483 (1983).
18. S. Matsubara, T. Sakuma, S. Yamamichi, H. Yamaguchi, Y. Miyasaka, in Mater. Res. Soc. Symp. Proc. 200, E.R. Myers, A.I. Kingon, Eds. (Materials Research Society, Warrendale, PA, 1990), pp. 243-253.
19. T. Sakuma, S. Yamamichi, S. Matsubara, H. Yamaguchi, Y. Miyasaka, Appl. Phys. Lett. 57, 2431 (1990).
20. H. Yamaguchi, S. Matsubara, Y. Miyasaka, Jpn. J. Appl. Phys. 30, 2197 (1991).
21. H. Nagata, T. Tsukahara, S. Gonda, M. Yoshimoto, H. Koinuma, Jpn. J. Appl. Phys., Part 2 30, L1136 (1991).
22. D.G. Schlom, C.A. Billman, J.H. Haeni, J. Lettieri, P.H. Tan, R.R.M. Held, S. Volk, K.J. Hubbard, in Thin Films and Heterostructures for Oxide Electronics, S.B. Ogale, Ed. (Springer, New York, 2005), pp. 31-78.
23. I. Barin, Thermochemical Data of Pure Substances (VCH, Weinheim, Germany, ed. 3, 1995), vol. 1-2.
24. E.P. Gusev, D.A. Buchanan, E. Cartier, A. Kumar, D. DiMaria, S. Guha, A. Callegari, S. Zafar, P.C. Jamison, D.A. Neumayer, M. Copel, M.A. Gribelyuk, H. Okorn-Schmidt, C. D'Emic, P. Kozlowski, K. Chan, N. Bojarczuk, L.-Å. Ragnarsson, P. Ronsheim, K. Rim, R.J. Fleming, A. Mocuta, A. Ajmera, in IEDM Technical Digest 2001 (IEEE, Piscataway, NJ, 2002), pp. 451-454.
25. S. Guha, E. Cartier, M.A. Gribelyuk, N.A. Bojarczuk, M.C. Copel, Appl. Phys. Lett. 77, 2710 (2000).
26. K.J. Hubbard, D.G. Schlom, J. Mater. Res. 11, 2757 (1996).
27. D.G. Schlom, J.H. Haeni, MRS Bull. 27, 198 (2002).
28. C.A. Billman, P.H. Tan, K.J. Hubbard, D.G. Schlom, in Mater. Res. Soc. Symp. Proc. 567, H.R. Huff, C.A. Richter, M.L. Green, G. Lucovsky, T. Hattori, Eds. (Materials Research Society, Warrendale, 1999), pp. 409-414.
29. H.M. Manasevit, W.I. Simpson, J. Appl. Phys. 35, 1349 (1964).
30. U.M. Manasevit, A. Miller, F.L. Morritz, R. Nolder, Trans. Metall. Soc. AIME 233, 540 (1965).
31. T.L. Chu, M.H. Francombe, G.A. Gruber, J.J. Oberly, R.L. Tallman, Deposition of Silicon on Insulating Substrates (Report No. AFCRL-65-574, Westinghouse Research Laboratories, Pittsburgh, PA, 1965), pp. 31-34 and 41-14 (NTIS ID No. AD-619 992).
32. H.M. Manasevit, D.H. Forbes, I.B. Cadoff, Trans. Metall. Soc. AIME 236, 275 (1966).
33. J.D. Filby, S. Nielsen, Br. J. Appl. Phys. 18, 1357 (1967).
34. H.M Manasevit, J. Cryst. Growth 22, 125 (1974).
35. F.A. Ponce, Appl. Phys. Lett. 41, 371 (1982).
36. M. Morita, H. Fukumoto, T. Imura, Y Osaka, M. Ichihara, J. Appl. Phys. 58, 2407 (1985).
37. Y. Osaka, T. Imura, Y. Nishibayashi, F. Nishiyama, J. Appl. Phys. 63, 581 (1988).
38. Y. Kado, Y. Arita, J. Appl. Phys. 61, 2398 (1987).
39. Y Kado, Y. Arita, in Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials (The Japan Society of Applied Physics, Tokyo, 1986), pp. 45-48.
40. Y. Kado, Y. Arita, in Extended Abstracts of the 20th (1988 International) Conference on Solid State Devices and Materials (The Japan Society of Applied Physics, Tokyo, 1988), pp. 181-184.
41. M. Ishida, I. Katakabe, T. Nakamura, N. Ohtake, Appl. Phys. Lett. 52, 1326 (1988).
42. K. Sawada, M. Ishida, T. Nakamura, N. Ohtake, Appl. Phys. Lett. 52, 1672 (1988).
43. K. Sawada, M. Ishida, T. Nakamura, T. Suzaki, J. Crysf. Growth 95, 494 (1989).
44. M. Ishida, K. Sawada, S. Yamaguchi, T. Nakamura, T. Suzaki, Appl. Phys. Lett. 55, 556 (1989).
45. M. Ishida, S. Yamaguchi, Y. Masa, T. Nakamura, Y. Hikita, J. Appl. Phys. 69, 8408 (1991).
46. H. Myoren, Y. Nishiyama, H. Fukumoto, H. Nasu, Y Osaka, Jpn. J. Appl. Phys. 28, 351 (1989).
47. H. Fukumoto, T. Imura, Y Osaka, Appl. Phys. Lett. 55, 360 (1989).
48. H. Fukumoto, M. Yamamoto, Y Osaka, Proc. Electrochem. Soc. 90, 239 (1990).
49. M. Yamamoto, H. Fukumoto, Y Osaka, in Mater. Res. Soc. Proc. 221, R.F.C. Farrow, J.P. Harbison, P.S. Peercy, A. Zangwill, Eds. (Materials Research Society, Warrendale, PA, 1991), p. 35.
50. D.K. Fork, F.A. Ponce, J.C. Tramontana, T.H. Geballe, Appl. Phys. Lett. 58, 2294 (1991).
51. K. Harada, H. Nakanishi, H. Itozaki, S. Yazu, Jpn. J. Appl. Phys. 30, 934 (1991).
52. P. Tiwari, S. Sharan, J. Narayan, J. Appl. Phys. 69, 8358 (1991).
53. G. Soerensen, S. Gygax, Physica B 169, 673 (1991).
54. H. Behner, J. Wecker, Th. Matthée, K. Samwer, Surf. Interface Anal. 18, 685 (1992).
55. Th. Matthée, J. Wecker, H. Behner, G. Friedl, O. Eibl, K. Samwer, Appl. Phys. Lett. 61, 1240 (1992).
56. A. Lubig, Ch. Buchal, J. Schubert, C. Copetti, D. Guggi, C.L. Jia, B. Stritzker, J. Appl. Phys. 71, 5560 (1992).
57. A. Lubig, Ch. Buchal, D. Guggi, C.L. Jia, B. Stritzker, Thin Solid Films 217, 125 (1992).
58. H. Iizuka, K. Yokoo, S. Ono, Appl. Phys. Lett. 61, 2978 (1992).
59. A. Bardal, O. Eibl, Th. Matthée, G. Friedl, J. Wecker, J. Mater. Res. 8, 2112 (1993).
60. E.J. Tarsa, J.S. Speck, McD. Robinson, Appl. Phys. Lett. 63, 539 (1993).
61. R.A. McKee, F.J. Walker, M.F. Chisholm, Phys. Rev. Lett. 81, 3014 (1998).
62. 62.' R.A. McKee, F.J. Walker, M.F. Chisholm, Science 293, 468 (2001).
63. J.P. Liu, P. Zaumseil, E. Bugiei, H.J. Osten, Appl. Phys. Lett. 79, 671 (2001).
64. V. Narayanan, S. Guha, M. Copel, N.A. Bojarczuk, P.L. Flaitz, M. Gribelyuk, Appl. Phys. Lett. 81, 4183 (2002).
65. H. Kim, P.C. McIntyre, C.O. Chui, K.C. Saraswat, S. Stemmer, J. Appl. Phys. 96, 3467 (2004).
66. D.O. Klenov, L.F. Edge, D.G. Schlom, S. Stemmer, Appl. Phys. Lett. 86, 051901 (2005).
67. A. Fissel, D. Kuhne, E. Bugiei, H.J. Osten, Appl. Phys. Lett. 88, 153105 (2006).
68. A. Schmehl, V. Vaithyanathan, A. Herrnberger, S. Thiel, C. Richter, M. Liberati, T. Heeg, M. Röckerath, L. Fitting Kourkoutis, S. Mühlbaur, P. Böni, D.A. Muller, Y. Barash, J. Schubert, Y Idzerda, J. Mannhart, D.G. Schlom, Nature Mater. 6, 882 (2007).
69. W. Guo, A. Allenic, Y.B. Chen, X.Q. Pan, W. Tian, C. Adamo, D.G. Schlom, Appl. Phys. Lett. 92, 072101 (2008).
70. J. Lettieri, J.H. Haeni, D.G. Schlom, J. Vac. Sci. Technol. A 20, 1332 (2002).
71. V.V. Il'chenko, G.V. Kuznetsov, V.I. Strikha, A.I. Tsyganova, Mikroelektronika 27, 340 (1998)
72. [Russ. Microelectron. 27, 291 (1998)].
73. VV. Il'chenko, G.V. Kuznetsov, Pis'ma Zh. Tekh. Fiz. 27, 58 (2001)
74. [Sov. Tech. Phys. Lett. 27, 333 (2001)].
75. R.D. Shannon, J. Appl. Phys. 73, 348 (1993).
76. T.H. DiStefano, D.E. Eastman, Solid State Commun. 9, 2259 (1971).
77. G.A. Brown, W.C. Robinette, Jr., H.G. Carlson, J. Electrochem. Soc. 115, 948 (1968).
78. A.M. Goodman, Appl. Phys. Lett. 13, 275 (1968).
79. R.H. French, J. Am. Ceram. Soc. 73, 477 (1990).
80. D.M. Roessler, W.C. Walker, Phys. Rev. 159, 733 (1967).
81. M.L. Bortz, R.H. French, D.J. Jones, R.V. Kasowski, F.S. Ohuchi, Phys. Scripta 41, 537 (1990).
82. V.N. Abramov, A.I. Kuznetsov, Fiz. Tverd. Tela (Leningrad) 20, 689 (1978)
83. [Sov. Phys. Solid State 20, 399 (1978)].
84. Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology, O. Madelung, M. Schulz, H. Weiss, Eds. (Springer, Berlin, 1982), vol. 17b, pp. 22 and 27.
85. S. Zollner, private communication.
86. V.V. Afanas'ev, S. Shamuilia, M. Badylevich, A. Stesmans, L.F. Edge, W. Tian, D.G. Schlom, J.M.J. Lopes, M. Roeckerath, J. Schubert, Microelectron. Eng. 84, 2278 (2007).
87. H.H. Tippins, J. Phys. Chem. Solids 27, 1069 (1966).
88. S.S. Derbeneva, S.S. Batsanov, Dokl. Chem. Akad. Nauk SSSR 175, 1062 (1967)
89. [Sov. Chem. Dokl. 175, 710 (1967)].
90. S.-G. Lim, S. Kriventsov, T.N. Jackson, J.H. Haeni, D.G. Schlom, A.M. Balbashov, R. Uecker, P. Reiche, J.L. Freeouf, G. Lucovsky, J. Appl. Phys. 91, 4500 (2002).
91. H.M. Christen, G.E. Jellison, Jr., I. Ohkubo, S. Huang, M.E. Reeves, E. Cicerrella, J.L. Freeouf, Y Jia, D.G. Schlom, Appl. Phys. Lett. 88, 262906 (2006).
92. A.F. Andreeva, I.Y Gil'man, Zh. Prikl. Spektrosk. 28, 895 (1978)
93. [J. Appl. Spectrosc. (USSR) 28, 610 (1978)].
94. The Oxide Handbook, G.V Samsonov, Ed. (IFI/Plenum, New York, ed. 2, 1982), pp. 213.
95. G. Lucovsky, J.G. Hong, C.C. Fulton, Y. Zou, R.J. Nemanich, H. Ade, D.G. Schlom, J.L. Freeouf, Phys. Status Solidi B 241, 2221 (2004).
96. R.H. French, S.J. Glass, E.S. Ohuchi, Y.-N. Xu, W.Y. Ching, Phys. Rev. B 49, 5133 (1994).
97. G.A. Samara, J. Appl. Phys. 68, 4214 (1990).
98. K.L. Ovanesyan, A.G. Petrosyan, G.O. Shirinyan, C. Pedrini, L. Zhang, Opt. Mater. 10, 291 (1998).
99. J.M.J. Lopes, M. Roeckerath, T. Heeg, E. Rije, J. Schubert, S. Mantl, V.V. Afanas'ev, S. Shamuilia, A. Stesmans, Y. Jia, D.G. Schlom, Appl. Phys. Lett. 89, 222902 (2006).
100. J. Schubert, O. Trithaveesak, W. Zander, M. Roeckerath, T. Heeg, H.Y. Chen, C.L. Jia, P. Meuffels, Y. Jia, D.G. Schlom, Appl. Phys. A 90, 577 (2008).
101. V.V. Afanas'ev, A. Stesmans, C. Zhao, M. Caymax, T. Heeg, J. Schubert, Y. Jia, D.G. Schlom, G. Lucovsky, Appl. Phys. Lett. 85, 5917 (2004).
102. T. Arima, Y. Tokura, J.B. Torrance, Phys. Rev. B 48, 17006 (1993).
103. T. Heeg, J. Schubert, C. Buchal, E. Cicerrella, J.L. Freeouf, W. Tian, Y. Jia, D.G. Schlom, Appl. Phys. A 83,103 (2006).
104. V.V. Afanas'ev, A. Stesmans, L.F. Edge, D.G. Schlom, T. Heeg, J. Schubert, Appl. Phys. Lett. 88, 032104 (2006).
105. -1 after R. W. Collins, K. Vedam, in Encyclopedia of Applied Physics, G.L. Trigg, Ed. (VCH, New York, 1995), vol. 12, pp. 285-336.
106. N. Sata, M. Ishigame, S. Shin, Solid State Ionics 86-88, 629 (1996).
107. E.P. Gusev, V. Narayanan, M.M. Frank, IBM J. Res. Dev. 50, 387 (2006).
108. R. Chau, S. Datta, M. Doczy, B. Doyle, J. Kavalieros, M. Metz, IEEE Electron Device Lett. 25, 408 (2004).
109. M. Copel, E. Cartier, E.P. Gusev, S. Guha, N. Bojarczuk, M. Poppeller, Appl. Phys. Lett. 78, 2670 (2001).
110. E.J. Preisler, S. Guha, M. Copel, N.A. Bojarczuk, M.C. Reuter, E. Gusev, Appl. Phys. Lett. 85, 6230 (2004).
111. B. Doris, D.G. Park, K. Settlemyer, P. Jamison, D. Boyd, Y. Li, J. Hagan, T. Staendert, J. Mezzapelli, D. Dobuzinsky, B. Linder, V. Narayanan, S. Callegari, E. Gousev, K. Guarini, R. Jammy, M. Leong, in International Symposium on VLSI Technology (VLSTTSATECH) (IEEE, Piscataway, NJ, 2005), pp. 101-102.
112. W.J. Taylor, Jr., C. Capasso, B. Min, B. Winstead, E. Verret, K. Loiko, D. Gilmer, R.I. Hegde, J. Schaeffer, E. Luckowski, A. Martinez, M. Raymond, C. Happ, D.H. Triyoso, S. Kalpat, A. Haggag, D. Roan, J.-Y. Nguyen, L.B. La, L. Hebert, J. Smith, D. Jovanovic, D. Burnett, M. Foisy, N. Cave, P.J. Tobin, S.B. Samavedam, B.E. White, Jr., S. Venkatesan, in IEDM Technical Digest 2006 (IEEE, Piscataway, NJ, 2007), pp. 1-4.
113. K. Shiraishi, K. Yamada, K. Torii, Y. Akasaka, K. Nakajima, M. Konno, T. Chikyow, H. Kitajima, T. Arikado, Jpn. J. Appl. Phys., Part 2 43, L1413 (2004).
114. E. Cartier, ER. McFeely, V. Narayanan, P. Jamison, B.P. Linder, M. Copel, V.K. Paruchuri, VS. Basker, R. Haight, D. Lim, R. Carruthers, T. Shaw, M. Steen, J. Sleight, J. Rubino, H. Deligianni, S. Guha, R. Jammy, G. Shahidi, in International Symposium on VLSI Technology (VLSI-TSA-TECH) (IEEE, Piscataway, NJ, 2005), pp. 230-231.
115. K. Xiong, J. Robertson, M.C. Gibson, S.J. Clarke, Appl. Phys. Lett. 87, 183505 (2005).
116. S. Guha, V. Narayanan, Phys. Rev. Lett. 98, 196101 (2007).
117. M.V. Fischetti, D.A. Neumayer, E.A. Cartier, J. Appl. Phys. 90, 4587 (2001).
118. J.J. Peterson, C.D. Young, J. Barnett, S. Gopalan, J. Gutt, C.-H. Lee, H.-J. Li, T.-H. Hou, Y. Kim, C Lim, N. Chaudhary, N. Moumen, B.-H. Lee, G. Bersuker, G.A. Brown, P.M. Zeitzoff, M.I. Gardner, R.W. Murto, H.R. Huff, Electrochem. Solid-State Lett. 7, G164 (2004).
119. V. Narayanan, V.K. Paruchuri, N.A. Bojarczuk, B.P. Linder, B. Doris, Y.H. Kim, S. Zafar, J. Stathis, S. Brown, J. Arnold, M. Copel, M. Steen, E. Carrier, A. Callegari, P. Jamison, J.-P. Locquet, D.L. Lacey, Y. Wang, P.E. Batson, P. Ronsheim, R. Jammy, M.P. Chudzik, M. Ieong, S. Guha, G. Shahidi, T.C. Chen, in 2006 Symposium on VLSI Technology (IEEE, Piscataway, NJ, 2006), pp. 178-179.
120. S. Guha, V.K. Paruchuri, M. Copel, V. Narayanan, YY Wang, P.E. Batson, N.A. Bojarczuk, B. Linder, B. Doris, Appl. Phys. Lett. 90, 092902 (2007).
121. M. Chudzik, B. Doris, R. Mo, J. Sleight, E. Cartier, C. Dewan, D. Park, H. Bu, W. Natzle, W. Yan, C. Ouyang, K. Henson, D. Boyd, S. Callegari, R. Carter, D. Casarotto, M. Gribelyuk, M. Hargrove, W. He, Y. Kim, B. Linder, N. Moumen, V.K. Paruchuri, J. Stathis, M. Steen, A. Vayshenker, X. Wang, S. Zafar, T. Ando, R. Iijima, M. Takayanagi, V. Narayanan, R. Wise, Y. Zhang, R. Divakaruni, M. Khare, T.C. Chen, in 2007 Symposium on VLSI Technology (IEEE, Piscataway, NJ, 2007), pp. 194-195.
122. P. Sivasubramani, T.S. Böscke, J. Huang, C.D. Young, P.D. Kirsch, S.A. Krishnan, M.A. Quevedo-Lopez, S. Govindarajan, B.S. Ju, H.R. Harris, D.J. Lichtenwalner, J.S. Jur, A.I. Kingon, J. Kim, B.E. Gnade, R.M. Wallace, G. Bersuker, B.H. Lee, R. Jammy, in 2007 Symposium on VLSI Technology (IEEE, Piscataway, NJ, 2007), pp. 68-69.
123. P.D. Kirsch, P. Sivasubramani, J. Huang, C.D. Young, M.A. Quevedo-Lopez, H.C. Wen, H. Alshareef, K. Choi, C.S. Park, K. Freeman, M.M. Hussain, G. Bersuker, H.R. Harris, P. Majhi, R. Choi, P. Lysaght, B.H. Lee, H.-H. Tseng, R. Jammy, T.S. Böscke, D.J. Lichtenwalner, J.S. Jur, A.I. Kingon, Appl. Phys. Lett. 92, 092901 (2008).
124. J.W. McPherson, J. Kim, A. Shanware, H. Mogul, J. Rodriguez, IEEE Trans. Electron Devices 50, 1771 (2003).
125. G. Ribes, J. Mitard, M. Denais, S. Bruyère, F. Monsieur, C. Parthasarathy, E. Vincent, G. Ghibaudo, IEEE Trans. Device Mater. Reliabilty 5, 5 (2005).
126. A.Y. Kang, P.M. Lenahan, J.F. Conley, Jr., Appl. Phys. Lett. 83, 3407 (2003).
127. S. Datta, G. Dewey, M. Doczy, B.S. Doyle, B. Jin, J. Kavalieros, R. Kotlyar, M. Metz, N. Zelick, R. Chau, in IEDM Technical Digest 2003 (IEEE, Piscataway, NJ, 2004), pp. 653-656.
128. K. Mistry, C. Allen, C. Auth, B. Beattie, D. Bergstrom, M. Bost, M. Brazier, M. Buehler, A. Cappellani, R. Chau, C.-H. Choi, G. Ding, K. Fischer, T. Ghani, R. Grover, W. Han, D. Hanken, M. Hattendorf, J. He, J. Hicks, R. Huessner, D. Ingerly, P. Jain, R. James, L. Jong, S. Joshi, C. Kenyon, K. Kuhn, K. Lee, H. Liu, J. Maiz, B. McIntyre, P. Moon, J. Neirynck, S. Pae, C. Parker, D. Parsons, C. Prasad, L. Pipes, M. Prince, P. Ranade, T. Reynolds, J. Sandford, L. Shifren, J. Sebastian, J. Seiple, D. Simon, S. Sivakumar, P. Smith, C. Thomas, T. Troeger, P. Vandervoorn, S. Williams, K. Zawadzki, in IEDM Technical Digest 2007 (IEEE, Piscataway, NJ, 2008), pp. 247-250.
129. C. Auth, M. Buehler, A. Cappellani, C.-H. Choi, G. Ding, W. Han, S. Joshi, B. McIntyre, M. Prince, P. Ranade, J. Sandford, C. Thomas, Intel Technol. J. 12, 77 (2008).
130. L.F. Edge, D.G. Schlom, R.T. Brewer, Y.J. Chabal, J.R. Williams, S.A. Chambers, C. Hinkle, G. Lucovsky, Y Yang, S. Stemmer, M. Copel, B. Holländer, J. Schubert, Appl. Phys. Lett. 84, 4629 (2004).
131. K.H. Kim, D.B. Farmer, J.-S.M. Lehn, P.V. Rao, R.G. Gordon, Appl. Phys. Lett. 89, 133512 (2006).
132. R. Kotlyar, M.D. Giles, P. Matagne, B. Obradovic, L. Shifren, M. Stettler, E. Wang, in IEDM Technical Digest 2004 (IEEE, Piscataway, NJ, 2005), pp. 391-394.
133. H. Shang, M.M. Frank, E.P. Gusev, J.O. Chu, S.W. Bedell, K.W. Guarini, M. Ieong, IBM J. Res. Dev. 50, 377 (2006).
134. G. Zhang, X. Wang, X. Li, Y. Lu, A. Javey, H. Dai, in IEDM Technical Digest 2006 (IEEE, Piscataway, NJ, 2007), pp. 1-4.
135. S. Datta, T. Ashley, J. Brask, L. Buckle, M. Doczy, M. Emeny, D. Hayes, K. Hilton, R. Jefferies, T. Martin, TJ. Phillips, D. Wallis, P. Wilding, R. Chau, in IEDM Technical Digest 2005 (IEEE, Piscataway, NJ, 2006), pp. 763-766.
136. Y Xuan, Y.Q. Wu, P.D. Ye, IEEE Electron Device Lett. 29, 294 (2008).
137. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).
138. P.W. Peacock, J. Robertson, J. Appl. Phys. 92, 4712 (2002).
139. J. Robertson, Rep. Prog. Phys. 69, 327 (2006).
140. V.V. Afanas'ev, A. Stesmans, J. Appl. Phys. 102, 081301 (2007).