Band alignment of atomic layer deposited HfO2 on clean and N passivated germanium surfaces

Applied Physics Letters

Volumn 97, Issue 24, 2010, Pages

  Rumaiz, Abdul K ^a   Woicik, J C ^b   Carini, G A ^a   Siddons, D P ^a   Cockayne, E ^b   Huey, E ^a   Lysaght, P S ^c   Fischer, D A ^b   Genova, V ^d  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c SEMATECH   (United States)

^d Cornell University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BAND ALIGNMENTS; BAND BARRIERS; BAND OFFSETS; CAPACITANCE VOLTAGE MEASUREMENTS; DENSITY OF STATE; FIRST-PRINCIPLES CALCULATION; GE(100); GE(100) SURFACE; GERMANIUM SURFACE; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; OXIDE CHARGE; VALENCE-BAND MAXIMUMS; VALENCE-BAND OFFSET;

ALIGNMENT; ATOMIC SPECTROSCOPY; HAFNIUM COMPOUNDS; HETEROJUNCTIONS; PASSIVATION; VALENCE BANDS; X RAY PHOTOELECTRON SPECTROSCOPY;

GERMANIUM;

EID: 78650381829     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3524262     Document Type: Article

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