Evolution of materials technology for stacked-capacitors in 65 nm embedded-DRAM

Solid-State Electronics

Volumn 49, Issue 11 SPEC. ISS., 2005, Pages 1767-1775

  Gerritsen, Eric ^a   Emonet, Nicolas ^b   Caillat, Christian ^b   Jourdan, Nicolas ^b   Piazza, Marc ^b   Fraboulet, David ^d   Boeck, Bruce ^c   Berthelot, Audrey ^a   Smith, Steven ^a   Mazoyer, Pascale ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

^c FREESCALE SEMICONDUCTOR INC   (United States)

^d CEA LETI   (France)

Author keywords

ALD; Atomic layer deposition; Capacitor; Dielectric; DRAM; Electrode; High k; MIM

Indexed keywords

CAPACITORS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC INSULATORS; ELECTRODES; EMBEDDED SYSTEMS; SILICON;

ATOMIC LAYER DEPOSITION (ALD); HIGH-K; MATERIALS TECHNOLOGY; MIM;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 28044447824     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.10.024     Document Type: Article

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