Systematic study on work-function-shift in metal/Hf-based high- k gate stacks

Applied Physics Letters

Volumn 94, Issue 12, 2009, Pages

  Kita, Yuki ^a   Yoshida, Shinichi ^a   Hosoi, Takuji ^a   Shimura, Takayoshi ^a   Shiraishi, Kenji ^b   Nara, Yasuo ^c   Yamada, Keisaku ^d   Watanabe, Heiji ^a  

^a OSAKA UNIVERSITY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^d WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL ELECTRODES; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; MOS CAPACITORS; OXYGEN; OXYGEN VACANCIES;

AU ELECTRODES; BOND HYBRIDIZATIONS; CAPACITANCE-VOLTAGE CURVES; FLAT-BAND VOLTAGES; GATE ELECTRODE MATERIALS; HIGH-K GATE DIELECTRICS; HIGH-K GATE STACKS; INTERFACE DIPOLES; SYSTEMATIC STUDIES; VFB SHIFTS; WORK-FUNCTION; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 63549120723     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3103314     Document Type: Article

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