Diffusion of O vacancies near Si:Hf O2 interfaces: An ab initio investigation

Physical Review B - Condensed Matter and Materials Physics

Volumn 76, Issue 7, 2007, Pages

  Tang, C ^a   Tuttle, B ^b   Ramprasad, R ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b BEHREND COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34547979214     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.76.073306     Document Type: Article

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