Te-induced modulation of the MoHf O2 interface effective work function

Applied Physics Letters

Volumn 92, Issue 11, 2008, Pages

  Xiong, Ka ^a   Delugas, Pietro ^a   Hooker, Jacob C ^a   Fiorentini, Vincenzo ^b   Robertson, John ^c   Liu, Dameng ^c   Pourtois, Geoffrey ^d  

^a NXP TSMC Research Center   (Belgium)

^b UNIVERSITY OF CAGLIARI   (Italy)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; MOLYBDENUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTITUTION REACTIONS;

FIRST PRINCIPLES CALCULATIONS; GROWTH CONDITIONS;

TELLURIUM;

EID: 41049086756     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2870078     Document Type: Article

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