-
1
-
-
0031623825
-
High-dielectric constant thin films for dynamic random access memories (DRAM)
-
Scott, J. F. High-dielectric constant thin films for dynamic random access memories (DRAM). Annu. Rev. Mater. Sci. 28, 79-100 (1998).
-
(1998)
Annu. Rev. Mater. Sci.
, vol.28
, pp. 79-100
-
-
Scott, J.F.1
-
2
-
-
0032607765
-
3 thin films with conducting perovskite electrodes for dynamic random access memory applications
-
3 thin films with conducting perovskite electrodes for dynamic random access memory applications. Appl. Phys. Lett. 74, 3194-3196 (1999).
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 3194-3196
-
-
Nagaraj, B.1
-
3
-
-
3342947614
-
Anomalous capacitance of thin dielectric structures
-
Mead, C. A. Anomalous capacitance of thin dielectric structures. Phys. Rev. Lett. 6, 545-546 (1961).
-
(1961)
Phys. Rev. Lett.
, vol.6
, pp. 545-546
-
-
Mead, C.A.1
-
4
-
-
0001264799
-
Intrinsic dead layer effect and the performance of ferroelectric thin film capacitors
-
Zhou, C. & Newns, D. M. Intrinsic dead layer effect and the performance of ferroelectric thin film capacitors. J. Appl. Phys. 82, 3081-3088 (1997).
-
(1997)
J. Appl. Phys.
, vol.82
, pp. 3081-3088
-
-
Zhou, C.1
Newns, D.M.2
-
6
-
-
0032623974
-
Electric-field penetration into metals: Consequences for high-dielectric constant capacitors
-
Black, C. T. & Welser, J. J. Electric-field penetration into metals: consequences for high-dielectric constant capacitors. IEEE Trans. Electron Devices 46, 776-780 (1999).
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, pp. 776-780
-
-
Black, C.T.1
Welser, J.J.2
-
7
-
-
0000062057
-
Thickness dependence of the effective dielectric constant in a thin film capacitor
-
Natori, K., Otani, D. & Sano, N. Thickness dependence of the effective dielectric constant in a thin film capacitor. Appl. Phys. Lett. 73, 632-634 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 632-634
-
-
Natori, K.1
Otani, D.2
Sano, N.3
-
8
-
-
7044231305
-
Intrinsic dielectric response in ferroelectric nano-capacitors
-
Saad, M. M. et al. Intrinsic dielectric response in ferroelectric nano-capacitors. J. Phys. Condens. Matter 16, L451-L456 (2004).
-
(2004)
J. Phys. Condens. Matter
, vol.16
-
-
Saad, M.M.1
-
9
-
-
79956001240
-
Exploring grain size as a cause for "dead-layer" effects in thin film capacitors
-
Sinnamon, L. J., Saad, M. M., Bowman, R. M. & Gregg, J. M. Exploring grain size as a cause for "dead-layer" effects in thin film capacitors. Appl. Phys. Lett. 81, 703-705 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 703-705
-
-
Sinnamon, L.J.1
Saad, M.M.2
Bowman, R.M.3
Gregg, J.M.4
-
11
-
-
0038410971
-
Models of electrode-dielectric interfaces in ferroelectric thin-film devices
-
Dawber, M. & Scott, J. F. Models of electrode-dielectric interfaces in ferroelectric thin-film devices. Jpn. J. Appl. Phys. 41, 6848-6851 (2002).
-
(2002)
Jpn. J. Appl. Phys.
, vol.41
, pp. 6848-6851
-
-
Dawber, M.1
Scott, J.F.2
-
12
-
-
0002086931
-
Experimental evidence of the size effect in thin ferroelectric films
-
Vendik, O. G., Zubko, S. P. & Ter-Martirosayn, L. T. Experimental evidence of the size effect in thin ferroelectric films. Appl. Phys. Lett. 73, 37-39 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 37-39
-
-
Vendik, O.G.1
Zubko, S.P.2
Ter-Martirosayn, L.T.3
-
13
-
-
0034704750
-
3 thin films
-
3 thin films. Nature 404, 373-376 (2000).
-
(2000)
Nature
, vol.404
, pp. 373-376
-
-
Sirenko, A.A.1
-
14
-
-
0007507455
-
The theory of metal-ceramic interfaces
-
Finnis, M. W. The theory of metal-ceramic interfaces. J. Phys. Condens. Matter 8, 5811-5836 (1996).
-
(1996)
J. Phys. Condens. Matter
, vol.8
, pp. 5811-5836
-
-
Finnis, M.W.1
-
17
-
-
25744460922
-
Projector augmented-wave method
-
Bloc̈hl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953-17979 (1994).
-
(1994)
Phys. Rev. B
, vol.50
, pp. 17953-17979
-
-
Bloc̈hl, P.E.1
-
19
-
-
0035535380
-
Phonons and related crystal properties from density-functional perturbation theory
-
Baroni, S., de Gironcoli, S. & Corso, A. D. Phonons and related crystal properties from density-functional perturbation theory. Rev. Mod. Phys. 73, 515-562 (2001).
-
(2001)
Rev. Mod. Phys.
, vol.73
, pp. 515-562
-
-
Baroni, S.1
De Gironcoli, S.2
Corso, A.D.3
-
20
-
-
24844473951
-
Band offsets in lattice-matched heterojunctions: A model and first-principles calculations for GaAs/AlAs
-
Baldereschi, A., Baroni, S. & Resta, R. Band offsets in lattice-matched heterojunctions: a model and first-principles calculations for GaAs/AlAs. Phys. Rev. B 61, 734-737 (1988).
-
(1988)
Phys. Rev. B
, vol.61
, pp. 734-737
-
-
Baldereschi, A.1
Baroni, S.2
Resta, R.3
-
21
-
-
28744435640
-
Theory of atomic-scale dielectric permittivity at insulator interfaces
-
Giustino, F. & Pasquarello, A. Theory of atomic-scale dielectric permittivity at insulator interfaces. Phys. Rev. B 71, 144104 (2005).
-
(2005)
Phys. Rev. B
, vol.71
, pp. 144104
-
-
Giustino, F.1
Pasquarello, A.2
-
22
-
-
0037417284
-
Critical thickness for ferroelectricity in perovskite ultrathin films
-
Junquera, J. & Ghosez, Ph. Critical thickness for ferroelectricity in perovskite ultrathin films. Nature 422, 506-509 (2003).
-
(2003)
Nature
, vol.422
, pp. 506-509
-
-
Junquera, J.1
Ghosez, Ph.2
-
23
-
-
2942683586
-
Fundamental size limits in ferroelectricity
-
Spaldin, N. A. Fundamental size limits in ferroelectricity. Science 304, 1606-1607 (2004).
-
(2004)
Science
, vol.304
, pp. 1606-1607
-
-
Spaldin, N.A.1
-
24
-
-
2942670851
-
Ferroelectricity in ultrathin perovskite films
-
Fong, D. D. et al. Ferroelectricity in ultrathin perovskite films. Science 304, 1650-1653 (2004).
-
(2004)
Science
, vol.304
, pp. 1650-1653
-
-
Fong, D.D.1
-
25
-
-
24144457619
-
-
(eds Rieth, M. & Schommers, W.) (American Scientific Publisher, Stevenson Ranch, California)
-
Ghosez, Ph. & Junquera, J. in Handbook of Theoretical and Computational Nanotechnology (eds Rieth, M. & Schommers, W.) (American Scientific Publisher, Stevenson Ranch, California, 2006).
-
(2006)
Handbook of Theoretical and Computational Nanotechnology
-
-
Ghosez, Ph.1
Junquera, J.2
-
26
-
-
0036640583
-
3 thin films with Pt or conducting oxide electrodes
-
3 thin films with Pt or conducting oxide electrodes. J. Appl. Phys. 92, 432-437 (2002).
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 432-437
-
-
Hwang, C.S.1
-
28
-
-
28844464275
-
3 capacitors
-
3 capacitors. Phys. Rev. Lett. 95, 237602 (2005).
-
(2005)
Phys. Rev. Lett.
, vol.95
, pp. 237602
-
-
Kim, D.J.1
-
29
-
-
27144458499
-
Ferroelectricity in ultrathin perovskite films
-
Sai, N., Kolpak, A. M. & Rappe, A. M. Ferroelectricity in ultrathin perovskite films. Phys. Rev. B 72, 020101(R) (2005).
-
(2005)
Phys. Rev. B
, vol.72
-
-
Sai, N.1
Kolpak, A.M.2
Rappe, A.M.3
|