Segregation of oxygen vacancy at metal-HfO2 interfaces

Applied Physics Letters

Volumn 92, Issue 23, 2008, Pages

  Cho, Eunae ^a   Lee, Bora ^a   Lee, Choong Ki ^a   Han, Seungwu ^a   Jeon, Sang Ho ^b   Park, Bae Ho ^b   Kim, Yong Sung ^c  

^a Ewha Womans University   (South Korea)

^b Konkuk University   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; OXYGEN VACANCIES;

FIRST-PRINCIPLES CALCULATIONS; SEGREGATION (BENEFICIATION);

HAFNIUM COMPOUNDS;

EID: 45149108299     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2943322     Document Type: Article

References (19)

1. E. P. Gusev, V. Narayanan, and M. M. Frank, IBM J. Res. Dev. 50, 387 (2006).
2. S. C. Song, C. S. Park, J. Price, C. Burham, R. Choi, H. H. Tseng, B. H. Lee, and R. Jammy, Tech. Dig.-Int. Electron Devices Meet. 2007, S13.3.
3. H. Y. Yu, C. Ren, Y. C. Yeo, J. F. Kang, X. P. Wang, H. H. H. Ma, M. F. Li, D. S. H. Chan, and D. L. Kwong, IEEE Electron Device Lett. 25, 337 (2004).
4. J. Robertson, O. Sharia, and A. A. Demkov, Appl. Phys. Lett. 91, 132912 (2007).
5. S. Guha and V. Narayanan, Phys. Rev. Lett. 98, 196101 (2007).
6. J. K. Schaeffer, L. R. C. Fonseca, S. B. Samavedam, Y. Liang, P. J. Tobin, and B. E. White, Appl. Phys. Lett. 85, 1826 (2004).
7. Y. Akasaka, G. Nakamura, K. Shiraishi, N. Umezawa, K. Yamabe, O. Ogawa, M. Lee, T. Amiaka, T. Kasuya, H. Watanabe, T. Chikyow, F. Ootsuka, Y. Nara, and K. Nakamura, Jpn. J. Appl. Phys., Part 2 45, L1289 (2006).
8. H. Takeuchi, H. Y. Wong, D. Ha, and T.-J. King, Tech. Dig.-Int. Electron Devices Meet. 2004, 829.
9. D. Lim, R. Haight, M. Copel, and E. Cartier, Appl. Phys. Lett. 87, 072902 (2005).
10. A. V. Gavrikov, A. A. Knizhnik, A. A. Bagatur'yants, B. V. Potapkin, L. R. C. Fonseca, M. W. Stoker, and J. Schaeffer, J. Appl. Phys. 101, 014310 (2007).
11. G. Kresse and J. Hafner, Phys. Rev. B 0163-1829 10.1103/PhysRevB.47.558 47, 558 (1993); G. Kresse and J. Hafner, Phys. Rev. B 49, 14251 (1994).
12. P. E. Blöchl, Phys. Rev. B 50, 17953 (1994).
13. D. M. Ceperley and B. J. Alder, Phys. Rev. Lett. 45, 566 (1980).
14. A. S. Foster, F. Lopez Gejo, A. L. Shluger, and R. M. Nieminen, Phys. Rev. B 65, 174117 (2002).
15. D. M. Duffy, J. H. Harding, and A. M. Stoneham, J. Appl. Phys. 76, 2791 (1994).
16. C. Tang, B. Tuttle, and R. Ramprasad, Phys. Rev. B 76, 073306 (2007).
17. S. H. Jeon, B. Park, J. Lee, B. Lee, and S. Han, Appl. Phys. Lett. 89, 042904 (2006).
18. K. Shiraishi, Y. Akasaka, S. Miyazaki, T. Nakayama, T. Nakaoka, G. Nakamura, K. Torii, H. Furutou, A. Ohta, P. Ahmet, K. Ohmori, H. Watanabe, T. Chikyow, M. L. Green, Y. Nara, and K. Yamada, Tech. Dig.-Int. Electron Devices Meet. 2005, 39.
19. K. Xiong, P. W. Peacock, and J. Robertson, Appl. Phys. Lett. 86, 012904 (2005).