Dielectric Discontinuity at Interfaces in the Atomic-Scale Limit: Permittivity of Ultrathin Oxide Films on Silicon

Physical Review Letters

Volumn 91, Issue 26 I, 2003, Pages 2676011-2676014

  Giustino, Feliciano ^a   Umari, Paolo ^a   Pasquarello, Alfredo ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CHEMICAL BONDS; CHEMICAL RELAXATION; COMPUTER SIMULATION; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); MAXWELL EQUATIONS; MOLECULAR DYNAMICS; OXIDATION; PROBABILITY DENSITY FUNCTION; QUANTUM THEORY; SILICA; SILICON; SUPERLATTICES; ULTRATHIN FILMS;

ATOMISTIC STRUCTURES; CHEMICAL GRADING;

PERMITTIVITY;

EID: 1042265903     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/physrevlett.91.267601     Document Type: Article

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