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Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 427-430

Ge volatilization products in high-k gate dielectrics

(4) Golias, E a,b Tsetseris, L a,c Dimoulas, A b Pantelides, S T c,d

a NATIONAL TECHNICAL UNIVERSITY OF ATHENS (Greece)

b INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY (Greece)

c VANDERBILT UNIVERSITY (United States)

d OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

Ab initio; Defects; Germanium; Impurities; Leakage; Traps

Indexed keywords

AB INITIO; CARRIER TRAPS; ENERGY BANDGAPS; FIRST-PRINCIPLES; GAP STATE; GATE STACKS; GE SUBSTRATES; HIGH-K GATE DIELECTRICS; HIGH-K GATE STACKS; HIGH-K OXIDES; HIGH-TEMPERATURE ANNEALING; IMPURITIES IN; LEAKAGE; QUANTUM-MECHANICAL CALCULATION; TRAPS;

ELECTRONIC PROPERTIES; GATES (TRANSISTOR); GERMANIUM; HAFNIUM COMPOUNDS; LEAKAGE (FLUID); LEAKAGE CURRENTS; LOGIC GATES;

GATE DIELECTRICS;

EID: 79751536764 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2010.07.041 Document Type: Conference Paper

Times cited : (14)

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