Impact of incorporated Al on the TiN/HfO2 interface effective work function

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Xiong, Ka ^a,c   Robertson, John ^b   Pourtois, Geoffrey ^c   Pétry, Jasmine ^a   Müller, Markus ^a  

^a NXP TSMC Research Center   (Belgium)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DIELECTRIC MATERIALS; HAFNIUM; HAFNIUM COMPOUNDS; PROBABILITY DENSITY FUNCTION; WORK FUNCTION;

AL CONCENTRATIONS; AL INCORPORATIONS; CONSISTENT; EFFECTIVE WORK FUNCTIONS; EXPERIMENTAL DATUM; FIRST PRINCIPLES CALCULATIONS; GROWTH CONDITIONS;

ALUMINUM;

EID: 54049104368     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2986158     Document Type: Article

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