SCOPUS 정보 검색 플랫폼

Volumn 105, Issue 6, 2009, Pages

First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si- SiO2 - HfO2 stack

(4) Broqvist, Peter a Alkauskas, Audrius b Godet, Julien b,c Pasquarello, Alfredo b

a EPFL (Switzerland)

b INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA (Switzerland)

c UNIVERSITÉ DE POITIERS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC MODELS; BAND OFFSETS; CHARGE STATE; DEFECT ENERGY LEVELS; DEFECT LEVELS; DIELECTRIC STACKS; ENERGY LEVELS; EXPERIMENTAL VALUES; FIRST-PRINCIPLES INVESTIGATIONS; HYBRID FUNCTIONALS; HYDROGEN INTERSTITIALS; INTERFACE STRUCTURES; INTERSTITIAL HYDROGENS; OXIDE INTERFACES; OXYGEN VACANCY DEFECTS; SILICON BAND GAPS;

DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; HAFNIUM COMPOUNDS; HYDROGEN; LASER PULSES; OXYGEN; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; VACANCIES;

OXYGEN VACANCIES;

EID: 63749101281 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3055347 Document Type: Article

Times cited : (47)

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