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Journal of Non-Crystalline Solids

Volumn 303, Issue 1, 2002, Pages 94-100

Band offsets of high dielectric constant gate oxides on silicon

(1) Robertson, J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; HOLE MOBILITY; LEAKAGE CURRENTS; PERMITTIVITY; SEMICONDUCTING SILICON;

BAND OFFSETS;

GATES (TRANSISTOR);

EID: 0036567818 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(02)00972-9 Document Type: Article

Times cited : (159)

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