First-principles calculation of the AlAs/GaAs interface band structure using a self-energy-corrected local density approximation

EPL

Volumn 94, Issue 2, 2011, Pages

  Ribeiro Jr , M ^a,b   Fonseca, L R C ^a   Ferreira, L G ^b  

^a Wernher von Braun Center for Advanced Research   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79955756493     PISSN: 02955075     EISSN: 12864854     Source Type: Journal    
DOI: 10.1209/0295-5075/94/27001     Document Type: Article

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