SCOPUS 정보 검색 플랫폼

Journal of Computer-Aided Materials Design

Volumn 8, Issue 1, 2001, Pages 39-57

Perspective paper: First principles modeling of high-k gate dielectrics

(3) Kawamoto, Atsushi a Cho, Kyeongjae a Dutton, Robert a

a Stanford University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; MATHEMATICAL MODELS; MOSFET DEVICES; PERMITTIVITY; PROBABILITY DENSITY FUNCTION; SILICA;

GATE OXIDES; STATIC LEAKAGE POWER;

DIELECTRIC MATERIALS;

EID: 0035737354 PISSN: 09281045 EISSN: None Source Type: Journal
DOI: 10.1023/A:1015011207910 Document Type: Article

Times cited : (19)

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