Ballistic carbon nanotube field-effect transistors

Nature

Volumn 424, Issue 6949, 2003, Pages 654-657

  Javey, Ali ^b   Guo, Jing ^a   Wang, Qian ^b   Lundstrom, Mark ^a   Dai, Hongjie ^b  

^a PURDUE UNIVERSITY   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; CARBON NANOTUBES; CHARGE CARRIERS; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRODES; LOW TEMPERATURE EFFECTS; PALLADIUM; PHONONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; WETTING;

SEMICONDUCTING NANOTUBES;

FIELD EFFECT TRANSISTORS;

CARBON; HYDROGEN; PALLADIUM;

NANOTECHNOLOGY;

ARTICLE; BALLISTICS; DEVICE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRICITY; ELECTRODE; ELECTRON TRANSPORT; GEOMETRY; ION CURRENT; LOW TEMPERATURE; MECHANICS; OPTICS; PERFORMANCE; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR; SENSITIVITY ANALYSIS; THERMAL ANALYSIS; TRANSPORT KINETICS; WETTABILITY;

EID: 0042991275     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/nature01797     Document Type: Article

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