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Applied Surface Science

Volumn 258, Issue 8, 2012, Pages 3552-3556

Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

(4) Kim, Kyung Joong a Lee, Seung Mi a Jang, Jong Shik a Moret, Mona b

a Korea Research Institute of Standards and Science (South Korea)

b Ametek (France)

Author keywords

Standard metrology; Thickness measurement; XPS

Indexed keywords

HAFNIUM OXIDES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PHOTOELECTRONS; PHOTONS; SILICA; THICKNESS GAGES; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EFFECTIVE ATTENUATION LENGTH; GENERAL EQUATIONS; INTERFACIAL OXIDE LAYERS; LINEAR RELATION; STANDARD DEVIATION; STANDARD METROLOGIES; THICKNESS VALUE; THIN OXIDE FILMS;

OXIDE FILMS;

EID: 84856211512 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2011.11.110 Document Type: Article

Times cited : (14)

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