Pulsed high-density plasmas for advanced dry etching processes

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 4, 2012, Pages

  Banna, Samer ^a   Agarwal, Ankur ^a   Cunge, Gilles ^b   Darnon, Maxime ^b   Pargon, Erwine ^b   Joubert, Olivier ^b  

^a APPLIED MATERIALS INC   (United States)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE; DRY ETCHING PROCESS; ETCH PROCESS; ETCHING MECHANISM; ETCHING PROCESS; HIGH DENSITY PLASMAS; INDEPENDENT CONTROL; INDUSTRIAL REACTORS; ION ENERGIES; ION FLUXES; MASS PRODUCTION; MICROELECTRONICS FABRICATION; NANO-METER SCALE; NEUTRAL RADICAL; PLASMA ETCHING PROCESS; PLASMA PARAMETER; POTENTIAL BENEFITS; PROFILE DISTORTION; PULSED PLASMA; RADICAL DENSITIES; SEMICONDUCTOR INDUSTRY; TECHNOLOGY NODES;

IONS; MICROELECTRONIC PROCESSING; MICROELECTRONICS; PLASMA DEVICES; PLASMA ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

PLASMAS;

EID: 84863636560     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4716176     Document Type: Review

References (119)

1. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (John Wiley Sons, Inc., Hoboken, NJ, 2005).
2. Handbook of Semiconductor Manufacturing Technology, edited by, R. Doering, and, Y. Nishi, 2nd ed. (CRC Press, Cleveland, OH, 2007).
3. P. Chabert and N. Braithwaite, Physics of Radio-Frequency Plasmas (Cambridge University Press, Cambridge, 2011).
4. K. Tokashiki, Jpn. J. Appl. Phys. 48, 08HD01 (2009). 10.1143/JJAP.48. 08HD01
5. K. P. Cheung and C. P. Chang, J. Appl. Phys. 75, 4415 (1994). 10.1063/1.355985
6. S. Fang, S. Murakawa, and J. P. McVittie, IEEE Trans. Electron Devices 41, 1848 (1994). 10.1109/16.324598
7. T. Tokashiki, K. Noguchi, K. Miyamoto, and H. Horiuchi, in Plasma Process-Induced Damage, 2nd International Symposium, p. 207 (1997).
8. T. Yunogami, T. Mizutani, K. Suzuki, and S. Nishimatsu, Jpn. J. Appl. Phys. 28, 2172 (1989). 10.1143/JJAP.28.2172
9. K. Hashimoto, Jpn. J. Appl. Phys. 33, 6013 (1994). 10.1143/JJAP.33.6013
10. T. Tatsumi, S. Fukuda, and S. Kadomura, Jpn. J. Appl. Phys. 33, 2175 (1994). 10.1143/JJAP.33.2175
11. S. Sakamori, T. Maruyama, N. Fujiwara, and H. Miyatake, Jpn. J. Appl. Phys. 37, 2321 (1998). 10.1143/JJAP.37.2321
12. K. Yonekura, T. Katayama, T. Maruyama, N. Fujiwara, and H. Miyatake, J. Vac. Sci. Technol. A 18, 176 (2000). 10.1116/1.582134
13. J. Kim, K. S. Shin, W. J. Park, Y. J. Kim, C. J. Kang, T. H. Ahn, and J. T. Moon, J. Vac. Sci. Technol. A 19, 1835 (2001). 10.1116/1.1369786
14. G. S. Hwang and K. P. Giapis, Jpn. J. Appl. Phys. 37, 2291 (1998). 10.1143/JJAP.37.2291
15. S. Samukawa and K. Terada, J. Vac. Sci. Technol. B 12, 3300 (1994). 10.1116/1.587616
16. S. Samukawa, Appl. Phys. Lett. 64, 3398 (1994). 10.1063/1.111290
17. S. Samukawa, Jpn. J. Appl. Phys. 33, 2133 (1994). 10.1143/JJAP.33.2133
18. A. Yokozawa, H. Ohtake, and S. Samukawa, Jpn. J. Appl. Phys. 35, 2433 (1996). 10.1143/JJAP.35.2433
19. S. Samukawa, H. Ohtake, and T. Mieno, J. Vac. Sci. Technol. A 14, 3049 (1996). 10.1116/1.580170
20. T. H. Ahn, K. Nakamura, and H. Sugai, Plasma Sources Sci. Technol. 5, 139 (1996). 10.1088/0963-0252/5/2/005
21. T. Mieno and S. Samukawa, Plasma Sources Sci. Technol. 6, 398 (1997). 10.1088/0963-0252/6/3/017
22. S. Banna, IEEE Trans. Plasma Sci. 37, 1730 (2009). 10.1109/TPS.2009. 2028071
23. A. Agarwal, P. J. Stout, S. Banna, S. Rauf, K. Tokashiki, J.-Y. Lee, and K. Collins, J. Appl. Phys. 106, 103305 (2009). 10.1063/1.3262616
24. M. Okigawa, Y. Ishikawa, and S. Samukawa, J. Vac. Sci. Technol. B 21, 2448 (2003). 10.1116/1.1629712
25. M. Okigawa, Y. Ishikawa, Y. Ichihashi, and S. Samukawa, J. Vac. Sci. Technol. B 22, 2818 (2004). 10.1116/1.1827219
26. R. W. Boswell and D. Henry, Appl. Phys. Lett. 47, 1095 (1985). 10.1063/1.96340
27. S. Samukawa and S. Furuoya, Appl. Phys. Lett. 63, 2044 (1993). 10.1063/1.110586
28. H. Ohtake and S. Samukawa, Appl. Phys. Lett. 68, 2416 (1996). 10.1063/1.116152
29. S. Samukawa and T. Mieno, Plasma Sources Sci. Technol. 5, 132 (1996). 10.1088/0963-0252/5/2/004
30. S. Samukawa, Appl. Phys. Lett. 68, 316 (1996). 10.1063/1.116071
31. J. T. Verdeyen, J. Vac. Sci. Technol. A 8, 1851 (1990). 10.1116/1.576815
32. C. Grabowski and J. M. Gahl, J. Appl. Phys. 70, 1039 (1991). 10.1063/1.349689
33. L. J. Overzet, Y. Lin, and L. Luo, J. Appl. Phys. 72, 5579 (1992). 10.1063/1.351957
34. L. J. Overzet, B. A. Smith, J. Kleber, and S. K. Kanakasabapathy, Jpn. J. Appl. Phys. 36, 2443 (1997). 10.1143/JJAP.36.2443
35. S. K. Kanakasabapathy, L. J. Overzet, V. Midha, and D. Economou, Appl. Phys. Lett. 78, 22 (2001). 10.1063/1.1338500
36. S. Kumagai, T. Shiraiwa, and S. Samukawa, J. Vac. Sci. Technol. A 22, 1093 (2004). 10.1116/1.1738656
37. H. Ohtake, K. Noguchi, S. Samukawa, H. Iida, A. Sato, and X.-Y. Qian, J. Vac. Sci. Technol. B 18, 2495 (2000). 10.1116/1.1312261
38. V. Todorow, J. Holland, and N. Gani, U.S. patent 6818562 (16 November 2004).
39. J.-Y. Chen, J. P. Holland, A. H. Sato, and V. N. Todorow, U.S. patent 6472822 (29 October 2002).
40. S. Banna, V. Todorow, and K. Ramaswamy, U.S. patent 0284156 A1 (19 November 2009).
41. A. Agarwal, Appl. Phys. Lett. 100, 044105 (2012). 10.1063/1.3679075
42. S. Ashida, C. Lee, and M. A. Lieberman, J. Vac. Sci. Technol. A 13, 2498 (1995). 10.1116/1.579494
43. D. P. Lymberopoulos, V. I. Kolobov, and D. J. Economou, J. Vac. Sci. Technol. A 16, 564 (1998). 10.1116/1.581072
44. P. Subramonium and M. J. Kushner, J. Vac. Sci. Technol. A 20, 313 (2002). 10.1116/1.1434964
45. P. Subramonium and M. J. Kushner, J. Appl. Phys. 96, 82 (2004). 10.1063/1.1751636
46. M. A. Lieberman and S. Ashida, Plasma Sources Sci. Technol. 5, 145 (1996). 10.1088/0963-0252/5/2/006
47. S. Behle, A. Brockhaus, and J. Engemann, Plasma Sources Sci. Technol. 9, 57 (2000). 10.1088/0963-0252/9/1/309
48. H. Sugai, K. Nakamura, Y. Hikosaka, and M. Nakamura, J. Vac. Sci. Technol. A 13, 887 (1995). 10.1116/1.579847
49. M. V. Malyshev, V. M. Donnelly, J. I. Colonell, and S. Samukawa, J. Appl. Phys. 86, 4813 (1999). 10.1063/1.371447
50. T. Mieno and S. Samukawa, Jpn. J. Appl. Phys. 34, L1079 (1995). 10.1143/JJAP.34.L1079
51. M. Edamura, E. C. Benck, and Y. Wang, J. Vac. Sci. Technol. A 24, 2151 (2006). 10.1116/1.2359736
52. D. Hayashi and K. Kadota, J. Appl. Phys. 83, 697 (1998). 10.1063/1.366740
53. H. M. Katsch, C. Manthey, and H. F. D. Bele, Plasma Sources Sci. Technol. 12, 475 (2003). 10.1088/0963-0252/12/3/324
54. S. Ashida and M. A. Lieberman, Jpn. J. Appl. Phys. 36, 854 (1997). 10.1143/JJAP.36.854
55. M. Meyyappan, J. Vac. Sci. Technol. A 14, 2122 (1996). 10.1116/1.580090
56. E. G. Thorsteinsson and J. T. Gudmundsson, J. Phys. D: Appl. Phys. 43, 115202 (2010). 10.1088/0022-3727/43/11/115202
57. V. Midha and D. J. Economou, Plasma Sources Sci. Technol. 9, 256 (2000). 10.1088/0963-0252/9/3/303
58. P. Subramonium and M. J. Kushner, Appl. Phys. Lett. 79, 2145 (2001). 10.1063/1.1406139
59. B. Ramamurthi and D. J. Economou, J. Vac. Sci. Technol. A 20, 467 (2002). 10.1116/1.1450581
60. S. Kim, M. A. Lieberman, A. J. Lichtenberg, and J. T. Gudmundsson, J. Vac. Sci. Technol. A 24, 2025 (2006). 10.1116/1.2345645
61. S. Panda, D. J. Economou, and M. Meyyappan, J. Appl. Phys. 87, 8323 (2000). 10.1063/1.373544
62. M. Meyyappan, Jpn. J. Appl. Phys. 36, 4820 (1997). 10.1143/JJAP.36.4820
63. R. W. Boswell and D. Vender, IEEE Trans. Plasma Sci. 19, 141 (1991). 10.1109/27.106807
64. G. Cunge, D. Vempaire, R. Ramos, M. Touzeau, O. Joubert, P. Bodard, and N. SČadežghi, Plasma Sources Sci. Technol. 19, 034017 (2010). 10.1088/0963-0252/19/3/034017
65. A. Agarwal and M. J. Kushner, J. Vac. Sci. Technol. A 26, 498 (2008). 10.1116/1.2909966
66. O. Zabeida and L. Martinu, J. Appl. Phys. 85, 6366 (1999). 10.1063/1.370139
67. G. D. Conway, A. J. Perry, and R. W. Boswell, Plasma Sources Sci. Technol. 7, 337 (1998). 10.1088/0963-0252/7/3/012
68. O. Zabeida, A. Hallil, M. R. Wertheimer, and L. Martinu, J. Appl. Phys. 88, 635 (2000). 10.1063/1.373714
69. S. A. Voronin, M. R. Alexander, and J. W. Bradley, Meas. Sci. Technol. 16, 2446 (2005). 10.1088/0957-0233/16/12/007
70. Y. Wang, E. C. Benck, M. Misakian, M. Edamura, and J. K. Olthoff, J. Appl. Phys. 87, 2114 (2000). 10.1063/1.372148
71. M. V. Malyshev and V. M. Donnelly, Plasma Sources Sci. Technol. 9, 353 (2000). 10.1088/0963-0252/9/3/314
72. P. Subramonium and M. J. Kushner, J. Vac. Sci. Technol. A 22, 534 (2004). 10.1116/1.1690251
73. A. Agarwal, P. J. Stout, S. Banna, S. Rauf, and K. Collins, J. Vac. Sci. Technol. A 29, 011017 (2011). 10.1116/1.3521315
74. S. G. Walton, D. Leonhardt, R. F. Fernsler, and R. A. Meger, Appl. Phys. Lett. 81, 987 (2002). 10.1063/1.1498502
75. K. S. Shin, K. K. Chi, C. J. Kang, C. Jung, C. O. Jung, J. T. Moon, and M. Y. Lee, Jpn. J. Appl. Phys. 37, 2349 (1998). 10.1143/JJAP.37.2349
76. A. Agarwal, S. Rauf, and K. Collins, IEEE Trans. Plasma Sci. 39, 2520 (2011). 10.1109/TPS.2011.2154343
77. G. Cunge, D. Vempaire, and N. SČadežghi, Appl. Phys. Lett. 96, 131501 (2010). 10.1063/1.3368124
78. G. Cunge, M. Mori, M. Kogelschatz, and N. SČadežghi, Appl. Phys. Lett. 88, 051501 (2006). 10.1063/1.2171768
79. G. Cunge, N. SČadežghi, and R. Ramos, J. Appl. Phys. 102, 093304 (2007). 10.1063/1.2803880
80. P. Bodart, M. Brihoum, G. Cunge, O. Joubert, and N. SČadež ghi, J. Appl. Phys. 110, 113302 (2011). 10.1063/1.3663443
81. S. Samukawa, Jpn. J. Appl. Phys. 32, 6080 (1993). 10.1143/JJAP.32.6080
82. K. Takahashi, M. Hori, and T. Goto, Jpn. J. Appl. Phys. 32, L1088 (1993). 10.1143/JJAP.32.L1088
83. S. Hayashi, H. Nakagawa, M. Yamanaka, and M. Kubota, Jpn. J. Appl. Phys. 36, 4845 (1997). 10.1143/JJAP.36.4845
84. M. Yamanaka, S. Hayashi, M. Kubota, and H. Nakagawa, Jpn. J. Appl. Phys. 37, 2343 (1998). 10.1143/JJAP.37.2343
85. J. P. Booth, G. Cunge, P. Chabert, and N. SČadežghi, J. Appl. Phys. 85, 3097 (1999). 10.1063/1.369649
86. J. P. Booth, H. Abada, P. Chabert, and D. B. Graves, Plasma Sources Sci. Technol. 14, 273 (2005). 10.1088/0963-0252/14/2/008
87. J. P. Booth, G. Hancock, N. D. Perry, and M. J. Toogood, J. Appl. Phys. 66, 5251 (1989). 10.1063/1.343712
88. G. Cunge and J. P. Booth, J. Appl. Phys. 85, 3952 (1999). 10.1063/1.370296
89. G. Cunge, P. Chabert, and J.-P. Booth, Plasma Sources Sci. Technol. 6, 349 (1997). 10.1088/0963-0252/6/3/012
90. G. Cunge, P. Chabert, and J.-P. Booth, J. Appl. Phys. 89, 7750 (2001). 10.1063/1.1371940
91. G. Cunge, D. Vempaire, M. Touzeau, and N. SČadežghi, Appl. Phys. Lett. 91, 231503 (2007). 10.1063/1.2822448
92. C. S. Moon, K. Takeda, S. Takashima, M. Sekine, Y. Setsuhara, M. Shiratani, and M. Hori, J. Appl. Phys. 107, 103310 (2010). 10.1063/1.3372750
93. P. Bodart, in 4th International Workshop on Plasma Etch and Strip in Microelectronics (Mechelen, Belgium, 2011).
94. M. Haass, M. Darnon, E. Pargon, S. Banna, and O. Joubert, in 63rd Gaseous Electronics Conference (Paris, France, 2010).
95. D. Vempaire and G. Cunge, Appl. Phys. Lett. 94, 021504 (2009). 10.1063/1.3067996
96. R. W. Boswell and R. K. Porteous, J. Appl. Phys. 62, 3123 (1987). 10.1063/1.339362
97. R. Petri, B. Kennedy, D. Henry, N. SČadežghi, and J.-P. Booth, J. Vac. Sci. Technol. B 12, 2970 (1994). 10.1116/1.587544
98. L. J. Overzet, J. H. Beberman, and J. T. Verdeyen, J. Appl. Phys. 66, 1622 (1989). 10.1063/1.344376
99. T. Maruyama, N. Fujiwara, S. Ogino, and H. Miyatake, Jpn. J. Appl. Phys. 37, 2306 (1998). 10.1143/JJAP.37.2306
100. G. S. Hwang and K. P. Giapis, J. Vac. Sci. Technol. B 15, 70 (1997). 10.1116/1.589258
101. V. Raballand, G. Cartry, and C. Cardinaud, J. Appl. Phys. 102, 063306 (2007). 10.1063/1.2784016
102. R. Ramos, G. Cunge, and O. Joubert, Vacuum 25, 290 (2007). 10.1116/1.2464126
103. T. Mukai, N. Ohshima, H. Hada, and S. Samukawa, J. Vac. Sci. Technol. A 25, 432 (2007). 10.1116/1.2712192
104. M. Schaepkens, G. S. Oehrlein, and J. M. Cook, J. Vac. Sci. Technol. B 18, 856 (2000). 10.1116/1.591286
105. V. Raballand, G. Cartry, and C. Cardinaud, Plasma Processes Polym. 4, 563 (2007). 10.1002/ppap.200600218
106. J. J. Vgh, D. Humbird, and D. B. Graves, J. Vac. Sci. Technol. A 23, 1598 (2005). 10.1116/1.2049304
107. L. Vallier, L. Desvoivres, M. Bonvalot, and O. Joubert, Appl. Phys. Lett. 75, 1069 (1999). 10.1063/1.124599
108. V. M. Donnelly, F. P. Klemens, T. W. Sorsch, G. L. Timp, and F. H. Baumann, Appl. Phys. Lett. 74, 1260 (1999). 10.1063/1.123518
109. S. A. Vitale and B. A. Smith, J. Vac. Sci. Technol. B 21, 2205 (2003). 10.1116/1.1609474
110. M. Darnon, ECS Trans. 27, 717 (2010). 10.1149/1.3360700
111. C. Petit-Etienne, J. Vac. Sci. Technol. B 28, 926 (2010). 10.1116/1.3483165
112. L. Sha and J. P. Chang, J. Vac. Sci. Technol. A 22, 88 (2004). 10.1116/1.1627771
113. E. Sungauer, E. Pargon, X. Mellhaoui, R. Ramos, G. Cunge, L. Vallier, O. Joubert, and T. Lill, J. Vac. Sci. Technol. B 25, 1640 (2007). 10.1116/1.2781550
114. X. Hua, X. Ji, J. He, J. H. Choi, and A. Khan, in AVS 57th International Symposium (Albuquerque, New Mexico, 2010).
115. T. Chiarella, Solid-State Electron. 54, 855 (2010). 10.1016/j.sse.2010. 04.010
116. L. Chang, Y.-K. Choi, D. Ha, P. RanČadež, S. Xiong, J. Bokor, C. Hu, and T.-J. King, Proc. IEEE 91, 1860 (2003). 10.1109/JPROC.2003. 818336
117. K. Ahmed and K. Schuegraf, IEEE Spectrum 48, 50 (2011). 10.1109/MSPEC.2011.6056626
118. K. Mistry, Tech. Dig.-Int. Electron Devices Meet. 2007, 247.
119. C. Auth, 45nm high-kmetal gate strain-enhanced transistors., VLSI Tech. Dig., 2008, pp. 128-129.