Pulse-time-modulated inductively coupled plasma etching for high-performance polysilicon patterning on thin gate oxides

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 5, 2000, Pages 2495-2499

  Ohtake, Hiroto ^a   Noguchi, Ko ^a   Samukawa, Seiji ^a   Iida, Hidekazu ^b   Sato, Arthur ^b   Qian, Xue yu ^b  

^a NEC CORPORATION   (Japan)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; GATES (TRANSISTOR); PLASMA ETCHING; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS;

PULSE-TIME-MODULATED INDUCTIVELY COUPLED PLASMA ETCHING;

MOSFET DEVICES;

EID: 0034268711     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1312261     Document Type: Article

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