Reduction of charge build-up with pulse-modulated bias in pulsed electron cyclotron resonance plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. B, 1998, Pages 2306-2310

  Maruyama, Takahiro ^a   Fujiwara, Nobuo ^a   Ogino, Satoshi ^a   Mlyatake, Hiroshi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Chlorine; Electron cyclotron resonance; Local side etch; Microwave plasma; Notch; Plasma etching; Pulse modulation; Rf bias; Sheath potential

Indexed keywords

ELECTRIC CHARGE; ELECTRON CYCLOTRON RESONANCE; PLASMA SHEATHS; PULSE MODULATION;

PULSED ELECTRON CYCLOTRON RESONANCE (ECR) PLASMAS;

PLASMA ETCHING;

EID: 0032051355     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2306     Document Type: Article

References (19)

1. T. Morimoto, C. Takahashi and S. Matsuo: Proc. 13th Symp. Dry Process (The Institute of Electrical Engineers Japan, Tokyo, 1991 ) p. 57.
2. M. Toyota, H. Sekiya, T Ejima, N. Fujiwara, H. Ootera and T. Oomori: Ext. Abstr. 39th Spring Meet. (Japan Society of Applied Physics and Related Societies, Chiba, 1992) 29a-NC-6 [in Japanese].
3. T. Nozawa, T. Kinosita, T. Nishizuka and A. Nakaue: Proc. Symp. Highly Selective Dry Etching and Damage Control, eds. G. S. Mathad and Y. Horiike (Electrochemical Society, Pennington, 1993) p. 134.
4. N. Fujiwara, T. Maruyama, M. Yoneda, K. Tsukamoto and T. Banjo: Jpn. J. Appl. Phys. 33 (1994) 2164.
5. M. Yoneda, T. Maruyama and N. Fujiwara: J. Vac. Sci. & Technol. B 12 (1994) 3363.
6. N. Fujiwara, T. Maruyama and M. Yoneda: Jpn. J. Appl. Phys. 34 ( 1995) 2095.
7. T. Kinoshita, M. Hane and J. P. McVittie: J. Vac. Sci. & Technol. B 14 (1996) 560.
8. G. S. Hwang and K P. Giapis: J. Vac. Sci. & Technol. B 15 (1997) 70.
9. S. Ogino, N. Fujiwara, H. Miyatake and M. Yoneda: Jpn. J. Appl. Phys. 35 (1996) 2445.
10. S. Ogino, N. Fujiwara, T. Maruyama and M. Yoneda: Jpn. J. Appl. Phys. 36 (1997) 2491.
11. K. Hashimoto: Jpn. J. Appl. Phys. 33 (1994) 6013.
12. S. Sakamori, T. Maruyama N. Fujiwara, H. Miyatake and M. Yoneda: Jpn. J Appl. Phys. 36 (1997) 2521.
13. S. Samukawa: Appl. Phys. Lett. 64 (1994) 3398.
14. S. Samukawa and K. Terada: Dig. Tech. Papers (1994 Symp. VLSI Technolog, 1994) p. 27.
15. N. Fujiwara. T. Maruyama and M. Yoneda: Jpn. J. Appl. Phys. 35 ( 1996) 2450.
16. T. Maruyama, N. Fujiwara, S. Ogino and M. Yoneda: Jpn. J. Appl. Phys. 36 (1997) 2526.
17. N. Fujiwara, T. Maruyama and M. Yoneda: Jpn. J. Appl. Phys. 36 (1997) 2502.
18. MPS-30D is a trademark of Nissin Electric Co. Ltd.
19. N. Fujiwara, T. Maruyama and H. Miyatake: submitted to Jpn. J. Appl Phys.