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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 5, 2010, Pages 926-934

Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing

(9) Petit Etienne, Camille a Darnon, Maxime a Vallier, Laurent a Pargon, Erwine a Cunge, Gilles a Boulard, Fraņois a Joubert, Olivier a Banna, Samer b Lill, Thorsten b

a CNRS (France)

b APPLIED MATERIALS INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; SILICON COMPOUNDS; SILICON OXIDES; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE-RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY; AR PLASMAS; C-SI SUBSTRATES; CONTINUOUS WAVE; GATE ETCH; GATE ETCHING; IN-SITU ELLIPSOMETRY; OVER-ETCH; PLASMA OXIDATION; PROCESS CONDITION; SI SUBSTRATES; SILICON RECESS; SOURCE/DRAIN REGIONS; THIN GATE OXIDES;

PLASMAS;

EID: 77957723719 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3483165 Document Type: Article

Times cited : (70)

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