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Plasma Processes and Polymers

Volumn 4, Issue 5, 2007, Pages 563-573

Porous SiOCH, SiCH and SiO2 etching in high density fluorocarbon plasma with a pulsed bias

(3) Raballand, Vanessa a Cartry, Gilles a,b Cardinaud, Christophe a

a INSTITUT DES MATÉRIAUX JEAN ROUXEL (France)

b CNRS (France)

Author keywords

Ellipsometry; Low ; Plasma etching; Pulsed discharges; XPS

Indexed keywords

FLUOROCARBONS; INDUCTIVELY COUPLED PLASMA; SILICON COMPOUNDS; SURFACE ANALYSIS; SURFACE STRUCTURE;

ETCH RATE; ETCH SELECTIVITY; PULSED DISCHARGE; RADIO FREQUENCY BIAS PULSING;

PLASMA ETCHING;

EID: 34547502761 PISSN: 16128850 EISSN: 16128869 Source Type: Journal
DOI: 10.1002/ppap.200600218 Document Type: Article

Times cited : (8)

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