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Journal of Applied Physics

Volumn 106, Issue 10, 2009, Pages

Effect of simultaneous source and bias pulsing in inductively coupled plasma etching

(7) Agarwal, Ankur a Stout, Phillip J a Banna, Samer a Rauf, Shahid a Tokashiki, Ken b Lee, Jeong Yun b Collins, Ken a

a APPLIED MATERIALS INC (United States)

b SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS POWER; CONTINUOUS MODE; DISCHARGE CHARACTERISTICS; DUTY CYCLES; ETCHING RATE; HIGH ENERGY TAILS; ION ENERGIES; ION ENERGY AND ANGULAR DISTRIBUTION; MONTE CARLO; NANOSCALE FEATURES; OUT OF PHASE; PHASE LAGS; PLASMA CHARACTERISTICS; PLASMA MODEL; PLASMA PROCESSING; POLY-SI; POWER DEPOSITION; PROFILE EVOLUTION; PULSE SHAPES; PULSED PLASMA; RF PLASMA; TIME-AVERAGED; TRANSIENT PHENOMENON;

ANGULAR DISTRIBUTION; DISTRIBUTION FUNCTIONS; HIGH ENERGY PHYSICS; INDUCTIVELY COUPLED PLASMA; PLASMA DENSITY; PLASMA ETCHING; POLYSILICON; SILICON WAFERS;

ELECTRIC DISCHARGES;

EID: 71749107534 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3262616 Document Type: Article

Times cited : (54)

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