Pulse-time-modulated electron cyclotron resonance plasma etching with low radio-frequency substrate bias

Applied Physics Letters

Volumn 68, Issue 3, 1996, Pages 316-318

  Samukawa, Seiji ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0043110228     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116071     Document Type: Article

References (9)

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5. T. Mieno and S. Samukawa, Jpn. J. Appl. Phys. INS 34, L1079 (1995).
6. T. Morimoto, C. Takahashi, and S. Matsuo, in Proceedings of the 13th Dry Process Symposium (The Institute of Electrical Engineering of Japan, Tokyo, 1991), p. 57.
7. K. Hashimoto, T. Ohtsuka, K. Kawaguchi, M. Aoyama, and D. Matsunaga, Jpn. J. App. Phys. INS 32, 6109 (1993).
8. S. Murakawa and J. P. McVittie, in Ref. 6, p. 39.
9. N. Fujiwara, T. Maruyama, M. Yoneda, and K. Tsukamoto, Jpn. J. Appl. Phys. INS 33, 2164 (1994).