Oxidation of Si beneath thin SiO2 layers during exposure to HBr/O2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy

Applied Physics Letters

Volumn 74, Issue 9, 1999, Pages 1260-1262

  Donnelly, V M ^a   Klemens, F P ^a   Sorsch, T W ^a   Timp, G L ^a   Baumann, F H ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; BROMINE COMPOUNDS; ELECTRODES; GATES (TRANSISTOR); OXIDATION; PLASMA ETCHING; PLASMAS; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

FEED GAS; GATE OXIDE LAYER; VACUUM TRANSFER X RAY PHOTOELECTRON SPECTROSCOPY;

SILICA;

EID: 0033092501     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123518     Document Type: Article

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